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Origin of the Infrared Band From Porous Silicon

Published online by Cambridge University Press:  28 February 2011

G. Mauckner ,
J. Hamann ,
W. Rebitzer ,
T. Baier ,
K. Thonke ,
R. Sauer  and
Abt. Halbleiterphysik
G. Mauckner
Affiliation:
Universität Ulm, 89069 Ulm, Germany
J. Hamann
Affiliation:
Universität Ulm, 89069 Ulm, Germany
W. Rebitzer
Affiliation:
Universität Ulm, 89069 Ulm, Germany
T. Baier
Affiliation:
Universität Ulm, 89069 Ulm, Germany
K. Thonke
Affiliation:
Universität Ulm, 89069 Ulm, Germany
R. Sauer
Affiliation:
Universität Ulm, 89069 Ulm, Germany
Abt. Halbleiterphysik
Affiliation:
Universität Ulm, 89069 Ulm, Germany
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Abstract

The photoluminescence (PL) infrared (IR)-band of p-doped porous Si (PS) films is studied by steady-state and time-resolved PL and by photoluminescence excitation (PLE) in detail. In analogy to the S-band in the visible the IR-band shifts to higher energies with reduced average nanocrystal size. The IR- and S-bands are very different in their decay behavior and in their recombination lifetimes. The temperature-dependent PL intensity shows non-exponential decay with lifetime distributions in the nsec-µsec range in contrast to the stretched exponential decay shape of the S-band corresponding to lifetime distributions in the μsec -msec range. The origin of the IR-band is likely related to radiative recombination at deep defects in Si nanocrystals with quantum-upshifted band gaps.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 358: Symposium F – Microcrystalline and Nanocrystalline Semiconductors , 1994 , 489
Copyright
Copyright © Materials Research Society 1995

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References

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