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Origin of the 1.3 eV Transition in InP/InAlAs/InP Heterostructure

Published online by Cambridge University Press:  15 February 2011

T. Benyattou ,
M. A. Garcia-Perez ,
S. Moneger ,
G; Guillot  and
C. Caneau
T. Benyattou
Affiliation:
LPM (URA CNRS 358), bat 502 INSA, 69621 Villeurbanne CEDEX, FRANCE. btaha@insa.insa-lyon.fr
M. A. Garcia-Perez
Affiliation:
LPM (URA CNRS 358), bat 502 INSA, 69621 Villeurbanne CEDEX, FRANCE. btaha@insa.insa-lyon.fr
S. Moneger
Affiliation:
LPM (URA CNRS 358), bat 502 INSA, 69621 Villeurbanne CEDEX, FRANCE. btaha@insa.insa-lyon.fr
G; Guillot
Affiliation:
LPM (URA CNRS 358), bat 502 INSA, 69621 Villeurbanne CEDEX, FRANCE. btaha@insa.insa-lyon.fr
C. Caneau
Affiliation:
Bellcorre, 331 Newman-Spring road, Red Bank, NJ 07707-7040, USA
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Abstract

We report in this paper results from photoluminescence studies on InP/AlInAs/InP double heterostructure. We particuliary focus on the 1.26 eV recombination (also refered as the 1.3 eV transition) that originates from the inverse interface. We will show that its optical properties is related to the non commutativity of the AlInAs/InP band offset.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 406: Symposium L – Diagnostic Techniques for Semiconductor Materials Processing , 1995 , 277
Copyright
Copyright © Materials Research Society 1996

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