Hostname: page-component-76fb5796d-skm99 Total loading time: 0 Render date: 2024-04-25T15:30:41.912Z Has data issue: false hasContentIssue false
  • English
  • Français

Origin of Photodegradation in a-Si:H - Bond Breaking or Charge Trapplng?

Published online by Cambridge University Press:  15 February 2011

Tatsuo Shimizu ,
Minoru Kumeda ,
Qing Zhang ,
Jinyan Zhang  and
Toshihiro Ohtsuka
Tatsuo Shimizu
Affiliation:
Faculty of Engineering, Kanazawa University, Kanazawa 920, Japan
Minoru Kumeda
Affiliation:
Faculty of Engineering, Kanazawa University, Kanazawa 920, Japan
Qing Zhang
Affiliation:
Faculty of Engineering, Kanazawa University, Kanazawa 920, Japan
Jinyan Zhang
Affiliation:
Faculty of Engineering, Kanazawa University, Kanazawa 920, Japan
Toshihiro Ohtsuka
Affiliation:
Faculty of Engineering, Kanazawa University, Kanazawa 920, Japan
Get access

Abstract

In order to clarify the microscopic origin of the photodegradation in a-Si:II, two kinds of approaches have been done. One approach is to carry out the light soaking both at room temperature (RT) and 77 K to cause the photodegradation and to investigate the recovery by thermal annealing. The other approach is to investigate the light-induced ESR in hydrogenated amorphous silicon-nitrogen alloys (a-Si1-xNx:H) and to see the x-dependence down to x = 0. From the first approach, it is found that there is a very broad continuous distribution of annealing activation energies from a few eV through 1.4 eV. It appears less likely that such a wide distribution of annealing activation energy is related with the bond-breaking model. On the other hand, it is found from the second approach that there exist two distinct origins for the light-induced spins, the fast process and the slow process, which are likely to be the carrier capture and the bond breaking, respectively. From the continuation of the observed behavior to a-Si:H, that is, x = 0 in a-Si1-xNx:H, the RT photodegradation in a-Si:H appears to be the bond breaking.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 377: Symposium A – Amorphous Silicon Technology 1995 , 1995 , 239
Copyright
Copyright © Materials Research Society 1995

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Staebler, D. L. and Wronski, C. R., Appl. Phys. Lett. 31, 292 (1977).Google Scholar
[2] Stutzmann, M., Jackson, W. B. and Tsai, C. C., Phys. Rev. B 32, 23 (1985).Google Scholar
[3] Stradine, P. and Fritzsche, H., Philos. Mag. B 69, 121 (1994).Google Scholar
[4] Yamasaki, S. and Isoya, J., J. Non-Cryst. Solids 164–166, 169 (1993).Google Scholar
[5] Shimizu, T., Kumeda, M., Morimoto, A., Yokomichi, H. and Ishii, N., J. Non-Cryst. Solids 77/78, 377 (1985).Google Scholar
[6] Adler, D., J. Phys. (Paris) 42, C4–3 (1981).Google Scholar
[7] Zhang, Q., Kumeda, M. and Shimizu, T., Jpn. J. Appl. Phys. 32, L371 (1993).Google Scholar
[8] Zhou, J.-I.I., Okagawa, T., Kumeda, M. and Shimizu, T., Jpn. J. Appl. Phys. 33, L1135 (1994).Google Scholar
[9] Shimizu, T., Matsumoto, M., Yoshita, M., Iwami, M., Morimoto, A. and Kumeda, M., J. Non-Cryst. Solids 137/138, 391 (1991).Google Scholar
[10] Zhang, Q., Takashima, H., Zhou, J. -H., Kumeda, M. and Shimizu, T., Phys. Rev. B 50, 1551 (1994).Google Scholar
[11] Kumeda, M., Sugimoto, A., Zhang, J., Ozawa, Y. and Shimizu, T., J. Non-Cryst. Solids 164–166, 1065 (1993).Google Scholar
[12] Zhang, J., Zhang, Q., Kumeda, M. and Shimizu, T., Phys. Rev. B 51, 2137 (1995).Google Scholar
[13] Zhang, Q., Takashima, H., Zhou, J. -H., Kumeda, M. and Shimizu, T., Mat. Res. Soc. Symp. Proc. 336, 269 (1994).Google Scholar
[14] Osborne, I. S., Hata, N. and Matsuda, A., Jpn. J. Appl. Phys. 33, 6475 (1994).Google Scholar
[15] Kanicki, J., Sankaran, M., Galatos, A., Crowder, M. S. and Tober, E. D., Appl. Phys. Lett. 57, 698 (1990).Google Scholar
[16] Morigaki, K. and Yoshida, M., Philos. Mag. B 52, 289 (1985).Google Scholar