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Origin of Blue Shifts in Quantum-Well Wires Unrelated to Lateral Confinement

Published online by Cambridge University Press:  28 February 2011

Anders Gustafsson ,
X. Liu ,
I. Maximov ,
L. Samuelson  and
W. Seifert
Anders Gustafsson
Affiliation:
Department of Solid State Physics, Lund University, Box 118, S-221 00 Lund, Sweden.
X. Liu
Affiliation:
Department of Solid State Physics, Lund University, Box 118, S-221 00 Lund, Sweden.
I. Maximov
Affiliation:
Department of Solid State Physics, Lund University, Box 118, S-221 00 Lund, Sweden.
L. Samuelson
Affiliation:
Department of Solid State Physics, Lund University, Box 118, S-221 00 Lund, Sweden.
W. Seifert
Affiliation:
Department of Solid State Physics, Lund University, Box 118, S-221 00 Lund, Sweden.
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Abstract

Experimentally observed blue shifts of the peak position of the luminescence from quantum-well-wire and -dot structures are often significantly larger than the calculated shifts induced by lateral confinement in the structures. In this work we have used high-quality InGaAsAnP multi-quantum-wells for the fabrication of wires. The quantum wells are in the range 3 to 17 monolayers (ML) nominally. The thinnest well, 3 ML, shows a clearly resolved split into two luminescence peaks from areas with a thickness difference of 1 ML. In the case of the wires, the luminescence from the thicker wells show a blue shift, as well a significant broadening. However, the thinnest well shows no blue shift, but a different ratio of the two peaks, with the high energy peak favoured in the wire case. We interpret these effects in terms of a reduced transfer of excitons from thinner to thicker areas of the well in the wire as compared to the unpattemed areas. This due to a reduction of the transfer from 2 dimensional to 1 dimensional in the wires. The peaks originating in areas of different ML thicknesses are not spectrally resolved in the thicker wells and the reduced transfer therefore results in a blue shift as well as a broadening of the luminescence peak.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 283: Symposium F – Microcrystalline Semiconductors–Materials Science and Devices , 1992 , 795
Copyright
Copyright © Materials Research Society 1993

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References

REFERENCES

1. Samuelson, L., Georgsson, K., Gustafsson, A., Maximov, I., Montelius, L., Nilsson, S., Seifert, W., and Semu, A.. Proc. SPIE Vol. 1676, p. 154, (1992).Google Scholar
2. Gershoni, D., Temkin, H., Dolan, G. J., Dunsmuir, J., Chu, S. N. G. and Panish, M. B., Appl. Phys. Lett. 53, 995, (1988).Google Scholar
3. Izrael, A., Sermage, B., Marzin, J. Y., Ougazzden, A., Azoulay, R., Etrillard, J., Thierry-Mieg, V. and Henry, L., Appl. Phys. Lett. 56, 830, (1990).Google Scholar
4. Temkin, H., Dolan, G. J., Panish, M. B. and Chu, S. N. G., Appl. Phys. Lett. 50, 413, (1987).Google Scholar
5. Patillon, J. N., Gamonal, R., André, J. P., Soucail, B., Delalande, C. and Voos, M., J. Appl. Phys. 68, 3789, (1990).Google Scholar
6. Notomi, N., Naganuma, M., Y, Nishida, Tamamura, T., Iwamura, H., Nojima, S. and Okamoto, M., Appl. Phys. Lett. 58, 720, (1991).Google Scholar
7. Nilsson, S., Gustafsson, A., Montelius, L., Semu, A., Georgsson, K. and Samuelson, L., Inst. Phys. Conf. Ser. no 117, 699 (1991).Google Scholar
8. Sifert, W., Fornell, J.-O., Ledebo, L., Pistol, M.-E. and Samuelson, L., Appl. Phys. Lett. 56, 1128, (1990).Google Scholar
9. Gustafsson, A., Thesis, Lund University (1991).Google Scholar
10. Bimberg, D., Christen, J., Fukunaga, T., Nakashima, H.. Mars, D. E. and Miller, J. N., J. Vac. Sci. Technol. B 5, 1191 (1987).Google Scholar
11. Warwick, C. A., Jan, W.Y. and Ourmazd, A., Appl. Phys. Lett. 56, 2666 (1991).Google Scholar
12. Samuelson, L., Liu, X. and Nilsson, S. in Proceedings of the 20th International Conference on the Physics of Semiconductors, edited by Anastassakis, E. M. and Joannopoulus, J. D. (World Sceintific, Singapore, 1990), Vol. 2, p. 1625.Google Scholar
13. Bacher, G., Kovac, J., Streubel, K., Schweizer, H. and Scholz, F., Phys Rev. B 45, 9136 (1992).Google Scholar
14. Devaud, B., Damen, T. C., Shah, J. and Tu, C. W., Appl. Phys. Lett. 51 828, (1987).Google Scholar
15. Liu, X., Nilsson, S., Samuelson, L., W, Seifert and Souza, P. L., (accepted for publication in Phys. Rev. B).Google Scholar
16. Nilsson, S., Gustafsson, A. and Samuelson, L., Appl. Phys. Lett. 57, 878, (1990).Google Scholar
17. Warwick, C. A., Inst. Phys. Conf. Ser. No 117, 681 (1991).Google Scholar