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Oriented Growth of SrTiO3 Films on Si(100) Substrates Using In—situ Cleaning By Excited Hydrogen

Published online by Cambridge University Press:  28 February 2011

Hiroshi Ishiwara  and
Kazumutsu Azuma
Hiroshi Ishiwara
Affiliation:
Graduate School of Science and Engineering, Tokyo Institute of Technology, Nagatsuda, Midoriku, Yokohama 227 Japan
Kazumutsu Azuma
Affiliation:
Graduate School of Science and Engineering, Tokyo Institute of Technology, Nagatsuda, Midoriku, Yokohama 227 Japan
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Abstract

In—situ cleaning of Si surfaces in vacuum was successfully performed using excited hydrogen and it was applied to epitaxial growth of SrTiO3 films on Si(100) substrates. Epitaxial growth of SrTiO3 films was observed under optimum cleaning conditions, however, the epitaxial nature was found to be destroyed for films thicker than 50 nm, which is probably due to the non—stoichiometry of the films. The electrical properties of the initially epitaxial SrTiO3 films grown on the cleaned Si substrates were better than those of polycrystalline ones.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 116 , 1988 , 369
Copyright
Copyright © Materials Research Society 1988

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References

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