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Orientation relationship between metallic thin films and quasicrystalline substrates.

Published online by Cambridge University Press:  01 February 2011

V. Fournée ,
A. R. Rossa ,
T. A. Lograsso  and
P. A. Thiel
V. Fournée
Affiliation:
LSG2M, CNRS-UMR7584, Ecole des Mines, Parc de Saurupt, 54042 Nancy, France.
A. R. Rossa
Affiliation:
Department of Materials Science and engineering, Iowa State University, Ames, Iowa 50011, USA.
T. A. Lograsso
Affiliation:
Ames Laboratory, Iowa State University, Ames, Iowa 50011, USA. Department of Materials Science and engineering, Iowa State University, Ames, Iowa 50011, USA.
P. A. Thiel
Affiliation:
Ames Laboratory, Iowa State University, Ames, Iowa 50011, USA. Department of Chemistry, Iowa State University, Ames, Iowa 50011, USA.
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Abstract

We present experimental results on the structure of Ag thin films grown on high-symmetry surfaces of both quasicrystals and approximants. For coverages above ten monolayers, Ag form fcc nanocrystals with (111) plane parallel to the surface plane. Depending on the substrate surface symmetry, the Ag nanocrystals exist in one, two or five different orientations, rotated by a multiple of 2π/30. The orientation relationship between crystalline films and substrates appears to be determined by the following principles: high atomic density rows of the adsorbate are aligned along high atomic density rows of the substrate.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 805: Symposium LL – Quasicrystals , 2003 , LL8.3
Copyright
Copyright © Materials Research Society 2004

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References

BIBLIOGRAPHY

[1] Shen, Z., Kramer, M.J., Jenks, C.J., Goldman, A.I., Lograsso, T., Delaney, D., Heinzig, M., Raberg, W., Thiel, P.A., in Phys. Rev. B: Condens. Matter, 1998, p. 9961.Google Scholar
[2] Bolliger, B., Dmitrienko, V.E., Erbudak, M., Luscher, R., Nissen, H.U., Kortan, A.R., Phys. Rev. B: Condens. Matter 63 (2001) 052203/1.Google Scholar
[3] Fournee, V., Ross, A.R., Lograsso, T.A., Evans, J.W., Thiel, P.A., Surf. Science 537 (2003) 5.Google Scholar
[4] Shimoda, M., Sato, T.J., Tsai, A.P., Guo, J.Q., Surf. Sci. 507–510 (2002) 276.Google Scholar
[5] Vrijmoeth, J., van der Vegt, H.A., Meyer, J.A., Vlieg, E., Behm, R.J., Phys. Rev. Lett. 72 (1994) 3843.Google Scholar
[6] Koaczkiewicz, J., Bauer, E., Surf. Science 314 (1994) 221.Google Scholar
[7] Hellwig, O., Theis-Bröhl, K., Wilhelmi, G., Zabel, H., Surf. Science 410 (1998) 362.Google Scholar
[8] Boudard, M., De Boissieu, M., Janot, C., Heger, G., Beeli, C., Nissen, H.U., Vincent, H., Ibberson, R., Audier, M., Dubois, J.M., J. Phys.: Condens. Matter 4 (1992) 10149.Google Scholar
[9] Boudard, M., Klein, H., de Boissieu, M., Audier, M., Philos. Mag. A 74 (1996) 939.Google Scholar