Hostname: page-component-76fb5796d-vfjqv Total loading time: 0 Render date: 2024-04-25T10:02:54.423Z Has data issue: false hasContentIssue false
  • English
  • Français

Organometallic Chemical Vapor Deposition of Group-III Nitride Thin Films using Single Source Precursors

Published online by Cambridge University Press:  10 February 2011

Roland A. Fischer  and
Wolfram Rogge
Roland A. Fischer
Affiliation:
Lehrstuhl für Anorganische Chemie II Ruhr Universität Bochum, D-44780 Bochum
Wolfram Rogge
Affiliation:
Lehrstuhl für Anorganische Chemie II Ruhr Universität Bochum, D-44780 Bochum
Get access

Abstract

The OMCVD of AlN, GaN and InN thin films using the novel single source precursors (N3)2Ga[(CH2)3NMe2] (1), (N3)In[(CH2)3NMe2]2 (2) and (N3)Al(CH2)3NMe2]2 (3) is reported. The compounds are non-pyrophoric. Compound 2 is air stable. No additional N-sources were used for the growth of the nitrides. We achieved epitaxial (AlN, GaN) or polycrystalline (InN) growth at least 200°C below the decomposition temperature of the respective nitride. Some aspects of the reactivity of the precursors with ammonia and the resulting influence on the deposition process were investigated.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 482 , 1997 , 39
Copyright
Copyright © Materials Research Society 1998

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] a) Detchprohm, T.; Hiramatsu, K.; Sawaki, N.; Akasaki, I. J. Cryst. Growth, 137, (1994) 171. - b) S. Nakamura, Jap. J. Appl. Phys. 10A, (1991) L1705.10.1016/0022-0248(94)91267-XGoogle Scholar
[2] Tsubouchi, K., Mikoshiba, N., IEEE Transactions on Sonics and Ultrasonics, SU-32, (1985) 634.10.1109/T-SU.1985.31647Google Scholar
[3] Guo, Q., Kato, O., Yoshida, A., J. Appl. Phys. 73, (1993) 7969 10.1063/1.353906Google Scholar
[4] a) Eddy, C. R., Moustakas, T. D., J. Appl. Phys. 73, (1993) 448. - b) M. J. Paisley, Z. Sitar, J. B. Posthill, R. F. Davis, J. Vac. Sci. Technol. A7, (1989) 701.Google Scholar
[5] Ho, K.-L., Jensen, K. F., Hwang, J.-W., Gladfelter, W. L., Evans, F., J Cryst. Growth, 107, (1991) 376.Google Scholar
[6] Neumayer, D. A., Cowley, A. H., Decken, A., Jones, R. A., Lakhotia, V., Ekerdt, J. G., J. Am. Chem. Soc. 117, (1995) 5893.10.1021/ja00126a046Google Scholar
[7] Wiberg, E., Michaud, H., Z. Naturforsch., 9b, (1954) 502.Google Scholar
[8] Miehr, A., Mattner, M. R., Fischer, R. A., Organometallics 15, (1996) 2053.10.1021/om950926tGoogle Scholar
[9] Fischer, R. A., Kleine, M., Stuke, M., Lehmann, O., Chem. Mater. 7, (1995) 1863.10.1021/cm00058a017Google Scholar
[10] Cowley, A. H., Gabbai, F. P., Olbrich, F., Corbelin, S., Lagow, R. J., J. Organomet. Chem. 487, (1995) C5.10.1016/0022-328X(94)05131-TGoogle Scholar
[11] a) Schumann, H., Hartmann, U., Wassermann, W., Just, O., Dietrich, A., Pohl, L., Hostalek, M., Lokai, M., Chem. Ber. 124, (1991) 1113. - b) R. A. Fischer, W.Scherer, M. Kleine, Angew. Chem. 105, (1993) 778; Angew. Chem. Int. Ed. Engl. 32, (1993) 774.10.1002/cber.19911240520Google Scholar
[12] Miehr, A., Dissertation, Technische Universität München, 1996.Google Scholar
[13]a) Kuech, T. F., Wolford, D. J., Veuhoff, E., Deline, V., Mooney, P. M., Potemski, R., J. Appl. Phys. 62, (1987) 632. - b) A. salvador, G. Liu, W. Kim, Ouml;. Aktas, A. Botchkarev, H. Morkoc, Appl. Phys. Lett. 67, (1995) 3322.Google Scholar