Advances in integrated circuit density, speed and complexity are dependent on lower resistance, finer line width on-chip interconnections. Methods for incorporating copper interconnects into IC fabrication processes have been developed which accomplish this objective but most of these methods use some form of blanket metal deposition that requires mechanical and/or chemical removal of excess material. To date, investigations into the selective deposition of conductor materials for device fabrication have met with limited success. A new process for selectively depositing metallic conductors using inexpensive, organic-based chemical solutions could potentially force a paradigm shift in the deposition of metals for microelectronic applications. Reversing the process currently used for selectively removing impurities from metal bearing waste streams, electrochemically controlled deposition of metals from electrically non-conducting organic solutions on submicron feature sizes is possible. A description of the fundamental electrochemical processes involved and parameter space available to engineer the solution chemistry will be presented along with experimental results from model systems. A discussion of the technology in light of ULSI issues and applications will be included.