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Optoelectronic Properties of Pseudomorphic SixGel1−x,/Ge Heterostructures on (001) Ge
Published online by Cambridge University Press: 28 February 2011
Abstract
The optical and electronic properties of pseudomorphic SixGel1−x/Ge heterostructures are reviewed in brief. Potential applications of conduction and valence band alignments for modulation doped field effect transistors are outlined. Optical transition energies are calculated for ultra-thin, alternating four monolayer, Si/Ge heterostructures on (001) Ge.
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- Copyright © Materials Research Society 1987
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