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Opto-Electronic Properties of μc-Si Grown from SiF4 and H2 by PECVD

Published online by Cambridge University Press:  21 February 2011

Y. Okada ,
I. H. Campbell ,
P. M. Fauchet  and
S. Wagner
Y. Okada
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544
I. H. Campbell
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544
P. M. Fauchet
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544
S. Wagner
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544
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Abstract

Microcrystalline Si was grown from SiF4 and H2 by plasma-enhanced chemical vapor deposition. The films are almost completely crystalline with a crystallite size (determined from Raman spectra) of about 60 Å. The optical absorption and the electrical conductivity of these films were studied. With increasing hydrogen content in the films, the dark conductivity decreases strongly and the activation of the conductivity increases. We explain the conductivity qualitatively in terms of a grain boundary model.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 164: Symposium H – Materials Issues in Microcrystalline Semiconductors , 1989 , 15
Copyright
Copyright © Materials Research Society 1990

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