Hostname: page-component-848d4c4894-x24gv Total loading time: 0 Render date: 2024-05-01T08:57:11.248Z Has data issue: false hasContentIssue false
  • English
  • Français

The Optoelectronic Properties of a-Si, Ge:H(F) Alloys*)

Published online by Cambridge University Press:  26 February 2011

S. Wagner ,
V. Chu ,
D. S. Shen ,
J. P. Conde ,
S. Aljishi  and
Z E. Smith
S. Wagner
Affiliation:
Department of Electrical Engineering Princeton University, Princeton, NJ 08544
V. Chu
Affiliation:
Department of Electrical Engineering Princeton University, Princeton, NJ 08544
D. S. Shen
Affiliation:
Department of Electrical Engineering Princeton University, Princeton, NJ 08544
J. P. Conde
Affiliation:
IBM Graduate Fellow.
S. Aljishi
Affiliation:
Present address: Max-Planck Institut für Festkörperforschung, Stuttgart, W. Germany.
Z E. Smith
Affiliation:
Present address: Xerox Palo Alto Research Center, Palo Alto, California.
Get access

Abstract

We survey experimental evidence, obtained by optoelectronic measurements, and theoretical models for the density of gap states in a-Si,Ge:H(F) alloys. This survey shows that increasingly reproducible densities are obtained in the various segments of the energy gap. The results are becoming understood quantitatively. It is not yet clear if the reproducibility signals that the best material has been reached. The electron transport properties of low-gap (1.2 eV < Eopt < 1.4 eV) alloys are adequate for solar cells. Improvement of the hole transport properties, particularly (μr) which is set by the valence band tail width and the density of deep defects, is achieved through a reduction of the Urbach energy.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 118: Symposium E – Amorphous Silicon Technology , 1988 , 623
Copyright
Copyright © Materials Research Society 1988

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Footnotes

*

Work supported by the Electric Power Research Institute.

References

1. Huang, C.Y., Guha, S. and Hudgens, S.J., J. Non-Cryst. Solids 66, 87 (1984).CrossRefGoogle Scholar
2. Stutzmann, M., Nemanich, R.J. and Stuke, J., Phys. Rev. B30, 3595 (1984).CrossRefGoogle Scholar
3. Mackenzie, K.D., Eggert, J.R., Leopold, D.J., Li, Y.M., Lin, S. and Paul, W., Phys. Rev. B31, 2198 (1985).CrossRefGoogle Scholar
4. Skumanich, A., Frova, A. and Amer, N.M., Solid State Commun. 54, 597 (1985).CrossRefGoogle Scholar
5. Oda, S., Takagi, S. and Shimizu, I., Japan. J. Appl. Phys. 25, 49 (1986).CrossRefGoogle Scholar
6. Karg, F., Krühler, W., Möller, M. and Klitzing, K.v., J. Appl. Phys. 60, 2016 (1986).CrossRefGoogle Scholar
7. Aljishi, S., Smith, Z E., Slobodin, D., Kolodzey, J., Chu, V., Schwarz, R. and Wagner, S., Mat. Res. Soc. Proc. 70, 269 (1986).CrossRefGoogle Scholar
8. Griep, S. and Ley, L., J. Non-Cryst. Solids 59–60, 253 (1983).CrossRefGoogle Scholar
9. Evangelisti, F., J. Non-Cryst. Solids 77&78, 969 (1985).CrossRefGoogle Scholar
10. Wronski, C.R., Persans, P.D. and Abeles, B., Appl. Phys. Lett. 49, 569 (1985).CrossRefGoogle Scholar
11. Conde, J.P., Chu, V., Shen, D.S. and Wagner, S., 8th SERI PV AR&D Review Meeting, Denver, Nov. 16–18, 1987. Solar Cells, to be published.Google Scholar
12. Matsuura, H., Physics, J. Applied, to be published.Google Scholar
13. Tsutsumi, Y., Sakata, S., Abe, K., Nitta, Y., Okamoto, H. and Hamakawa, Y., J. Non-Cryst. Solids 98, 1063 (1987).CrossRefGoogle Scholar
14. Yukimoto, Y., JARECT 6, Amorphous Semiconductor Technologies & Devices, Hamakawa, Y., ed., North-Holland 1983, p. 136.Google Scholar
15. Beyer, W., J. Non-Cryst. Solids 97&98, 1027 (1987).CrossRefGoogle Scholar
16. Matsuda, A., Koyama, M., Ikuchi, N., Imanishi, Y. and Tanaka, K., Japan. J. Appl. Phys. 25, L54 (1986).CrossRefGoogle Scholar
17. Aljishi, S., Shen, D.S., Chu, V., Smith, Z E., Conde, J.P., Kolodzey, J., Slobodin, D. and Wagner, S., Mat. Res. Soc. Symp. Proc. 96, 323 (1987).CrossRefGoogle Scholar
18. Watanabe, T., Tanaka, M., Azuma, K., Nakatani, M., Sonobe, T. and Shimada, T., Japan. J. Appl. Phys. 26, L288 (1987).CrossRefGoogle Scholar
19. Aljishi, S., Chu, V., Smith, Z E., Shen, D.S., Conde, J.P., Slobodin, D., Kolodzey, J. and Wagner, S., J. Non-Cryst. Solids. 97&98, 1023 (1987)CrossRefGoogle Scholar
20. Shepard, K., Smith, Z E., Aljishi, S. and Wagner, S., this volume.Google Scholar
21. Shen, D.S., Princeton University, unpublished.Google Scholar
22. Z Smith, E., to be published.Google Scholar
23. Shen, D.S., Conde, J., Chu, V., Liu, J.Z., Maruyama, A., Aljishi, S. and Wagner, S., to be published.Google Scholar
24. Hack, M. and Shur, M., J. Appl. Phys. 58, 997 (1985).CrossRefGoogle Scholar
25. Aljishi, S., Smith, Z E., Chu, V., Kolodzey, J., Slobodin, D., Conde, J.P., Shen, D.S., and Wagner, S., AIP Conf. Proc. 157, 25 (1987).CrossRefGoogle Scholar
26. Slobodin, D., Aljishi, S., Okada, Y., Shen, D.S., Chu, V. and Wagner, S., Mat. Res. Soc. Symp. Proc. 70, 275 (1986.).CrossRefGoogle Scholar
27. Shen, D.S., Aljishi, S., Smith, Z E., Conde, J.P., Chu, V. and Wagner, S., Mat. Res. Soc. Symp. Proc. 95, 95 (1987).CrossRefGoogle Scholar
28. Mackenzie, K.D., Burnett, J.H., Eggert, J.R., Li, Y.M. and Paul, W., J. Non-Cryst. Solids 97&98, 1019 (1987).CrossRefGoogle Scholar
29. Weller, H.C., Paasche, S.M., Nebel, C.E., Kessler, F. and Bauer, G.H., Conf. Rec. 19th IEEE Photovoltaic Specialists Conf., New Orleans, May 4–8, 1987. IEEE, New York 1987, p. 872.Google Scholar
30. Shen, D.S., Conde, J.P., Aljishi, S., Smith, Z E., Chu, V., Kolodzey, J. and Wagner, S., Conf. Rec. 19th IEEE Photovoltaic Specialists Conf., New Orleans, May 4–8, 1987. IEEE, New York 1987, p. 884.Google Scholar
31. Vanderhaghen, R. and Longeaud, C., J. Non-Cryst. Solids 97&98, 1059 (1987).CrossRefGoogle Scholar
32. Guha, S., Payson, J.S., Agarwal, S.C. and Ovshinsky, S.R., J. Non-Cryst. Solids 97&98, 1455 (1987).CrossRefGoogle Scholar
33. Haku, H., Sayama, S., Nakashima, Y., Takahama, T., Isomura, M., Tarui, H., Hishikawa, Y., Tsuda, S., Nakano, S., Ohnishi, M. and Kuwano, Y., Japan. J. Appl. Phys. 26, 1978 (1987).CrossRefGoogle Scholar
34. Chu, V., Conde, J. and Shen, D.S., Princeton University, to be published.Google Scholar
35. Yan, P., Lichtin, N.N. and Morel, D.L., Appl. Phys. Lett. 50, 1367 (1987).CrossRefGoogle Scholar
36. Urbach, F., Phys. Rev. 92, 1324 (1953).CrossRefGoogle Scholar
37. Bar-Yam, Y., Adler, D. and Joannopoulos, J.D., Phys. Rev. Lett. 57, 467 (1988).CrossRefGoogle Scholar
38. Smith, Z E. and Wagner, S., Phys. Rev. Lett. 59, 688 (1987).CrossRefGoogle Scholar
39. Smith, Z E. and Wagner, S., Phys. Rev. B 32, 5510 (1985).CrossRefGoogle Scholar
40. Smith, Z E., Aljishi, S., Slobodin, D., Chu, V., Wagner, S., Lenehan, P.M., Arya, R.R. and Bennett, M.S., Phys. Rev. Lett. 57, 2450 (1986).CrossRefGoogle Scholar
41. Jackson, W.B. and Amer, N.M., Phys. Rev. B 25, 5559 (1982).CrossRefGoogle Scholar
42. Wronski, C.R., Smith, Z E., Aljishi, S., Chu, V., Shepard, K., Shen, D.S., Schwarz, R., Slobodin, D. and Wagner, S., AIP Conf. Proc. 157, 70 (1987).CrossRefGoogle Scholar
43. Smith, Z E., Chu, V., Shepard, K., Aljishi, S., Slobodin, D., Kolodzey, J. and Wagner, S., Appl. Phys. Lett. 50, 1521 (1987).CrossRefGoogle Scholar
44. Z Smith, E., Aljishi, S., Chu, V., Conde, J. and Wagner, S., 3rd Internat. PVSEC Technical Digest, November 3–6, 1987, Tokyo, p. 589.Google Scholar
45. Smith, Z E. and Wagner, S., Mat. Res. Soc. Symp. Proc. 95, 551 (1987).CrossRefGoogle Scholar
46. Chu, V., Aljishi, S., Conde, J.P., Smith, Z E., Shen, D.S., Slobodin, D., Kolodzey, J., Wronski, C.R. and Wagner, S., Conf. Rec. 19th IEEE Photovoltaic Specialists Conf., New Orleans, May 4–8, 1987, IEEE, New York 1987, p. 610.Google Scholar