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Optimization of RF-Sputtered ITO Films for High NIR Transparency at Low Deposition Temperature

Published online by Cambridge University Press:  01 February 2011

J. Zhou ,
X. Wu ,
T.A. Gessert ,
Y. Yan ,
G. Teeter  and
H.R. Moutinho
J. Zhou
Affiliation:
National Renewable Energy Laboratory, Golden, CO 80401
X. Wu
Affiliation:
National Renewable Energy Laboratory, Golden, CO 80401
T.A. Gessert
Affiliation:
National Renewable Energy Laboratory, Golden, CO 80401
Y. Yan
Affiliation:
National Renewable Energy Laboratory, Golden, CO 80401
G. Teeter
Affiliation:
National Renewable Energy Laboratory, Golden, CO 80401
H.R. Moutinho
Affiliation:
National Renewable Energy Laboratory, Golden, CO 80401
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Abstract

Sn-doped indium oxide (ITO) films deposited at temperatures <250°C by r.f. magnetron sputtering are investigated for use as transparent back-contact electrodes to CdS/CdTe top cells in two-junction, mechanically stacked tandem-cell designs. Results show that carrier mobility increases with substrate temperature while beneficial changes in carrier activation occurs at a substrate temperature ~230°C. Small additions of oxygen to the sputtering environment are effective at reducing near infrared (NIR) absorption. Control of these deposition parameters has produced ITO films with NIR absorption (860–1300 nm) < 10%, and electrical resistivity of <1x10-3 ohm-cm.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 865: Symposium F – Thin-Film Compound Semiconductor Photovoltaics , 2005 , F14.4
Copyright
Copyright © Materials Research Society 2005

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