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Optimization of GaN Channel Conductivity in AlGaN/GaN HFET Structures Grown by MOVPE

Published online by Cambridge University Press:  01 February 2011

S.M. Hubbard ,
G. Zhao ,
D. Pavlidis ,
E. Cho  and
W. Sutton
S.M. Hubbard
Affiliation:
EECS Department, The University of Michigan Ann Arbor, MI 48109–2122, USA and Darmstadt University of Technology, Department of High Frequency Electronics Merckstrasse 25, 64283 Darmstadt, Germany E-mail: hubbards@umich.edu, pavlidis@umich.edu or pavlidis@hf.tu-darmstadt.de
G. Zhao
Affiliation:
EECS Department, The University of Michigan Ann Arbor, MI 48109–2122, USA and Darmstadt University of Technology, Department of High Frequency Electronics Merckstrasse 25, 64283 Darmstadt, Germany E-mail: hubbards@umich.edu, pavlidis@umich.edu or pavlidis@hf.tu-darmstadt.de
D. Pavlidis
Affiliation:
EECS Department, The University of Michigan Ann Arbor, MI 48109–2122, USA and Darmstadt University of Technology, Department of High Frequency Electronics Merckstrasse 25, 64283 Darmstadt, Germany E-mail: hubbards@umich.edu, pavlidis@umich.edu or pavlidis@hf.tu-darmstadt.de
E. Cho
Affiliation:
EECS Department, The University of Michigan Ann Arbor, MI 48109–2122, USA and Darmstadt University of Technology, Department of High Frequency Electronics Merckstrasse 25, 64283 Darmstadt, Germany E-mail: hubbards@umich.edu, pavlidis@umich.edu or pavlidis@hf.tu-darmstadt.de
W. Sutton
Affiliation:
EECS Department, The University of Michigan Ann Arbor, MI 48109–2122, USA and Darmstadt University of Technology, Department of High Frequency Electronics Merckstrasse 25, 64283 Darmstadt, Germany E-mail: hubbards@umich.edu, pavlidis@umich.edu or pavlidis@hf.tu-darmstadt.de
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Abstract

Optimization of GaN channel conductivity in AlGaN/GaN Heterojunction Field Effect Transistor (HFET) structures was performed using High Resistivity (HR) GaN templates grown by Metal-organic Vapor Phase Epitaxy (MOVPE). The GaN sheet resistance was tuned using final nucleation layer (NL) annealing temperature. Using an annealing temperature of 1033°C, GaN with sheet resistance of 10 Ω/sq was achieved, comparable to that of Fe-doped GaN. X-Ray Diffraction (XRD) and Photoluminescence (PL) analysis show that the high resistance GaN is achieved due to compensating acceptor levels introduced through edge-type threading dislocations. XRD analysis also shows optimization of annealing temperature provided a means to maximize GaN sheet resistance without significantly degrading material quality. AlGaN/GaN HFET layers grown using HR GaN templates gave surface and interface roughness of 14 and 7 Å, respectively. The 2DEG Hall mobility and sheet charge of HFETs grown using HR GaN templates was comparable to similar layers grown using unintentionally doped (UID) GaN templates.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 831: Symposium E – GaN, AlN, InN, and Their Alloys , 2004 , E11.11
Copyright
Copyright © Materials Research Society 2005

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References

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