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Optically Detected Magnetic Resonance and Double Beam Photoluminescence of CdS/HgS/CdS Nanoparticles

Published online by Cambridge University Press:  09 August 2011

H. Porteanu ,
A. Glozman ,
E. Lifshitz ,
A. Eychmüller  and
H. Weller
H. Porteanu
Affiliation:
Department of Chemistry and Solid State Institute, Technion, Haifa 32000, Israel, ssefrat@tx.technion.ac.il
A. Glozman
Affiliation:
Department of Chemistry and Solid State Institute, Technion, Haifa 32000, Israel, ssefrat@tx.technion.ac.il
E. Lifshitz
Affiliation:
Department of Chemistry and Solid State Institute, Technion, Haifa 32000, Israel, ssefrat@tx.technion.ac.il
A. Eychmüller
Affiliation:
Department of Chemistry, Hamburg University, Hamburg, Germany, weller@chemie.uni-hamburg.de
H. Weller
Affiliation:
Department of Chemistry, Hamburg University, Hamburg, Germany, weller@chemie.uni-hamburg.de
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Abstract

CdS/HgS/CdS nanoparticles consist of a CdS core, epitaxially covered by one or two monolayers of HgS and additional cladding layers of CdS. The present paper describes our efforts to identify the influence of CdS/HgS/CdS interfaces on the localization of the photogenerated carriers deduced from the magneto-optical properties of the materials. These were investigated by the utilization of optically detected magnetic resonance (ODMR) and double-beam photoluminescence spectroscopy. A photoluminescence (PL) spectrum of the studied material, consists of a dominant exciton located at the HgS layer, and additional non-excitonic band, presumably corresponding to the recombination of trapped carriers at the interface. The latter band can be attenuated using an additional red excitation. The ODMR measurements show the existence of two kinds of electron-hole recombination. These electron-hole pairs maybe trapped either at a twin packing of a CdS/HgS interface, or at an edge dislocation of an epitaxial HgS or a CdS cladding layer.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 536: Symposium F – Microcrystalline & Nanocrystalline Semiconductors - 1998 , 1998 , 257
Copyright
Copyright © Materials Research Society 1999

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References

1. Bawendi, M. G., Carrol, P. J., Wilson, W. L. and Brus, L. E., J. Chem. Phys. 96, 946 (1992).Google Scholar
2. Eychmiiller, A., Hasselbarth, A., Katsikas, L. and Weller, H., Ber. Bunsenges. Phys. Chem. 95 (1), 79 (1991).Google Scholar
3. Spanhel, L., Haase, M., Weller, H. and Henglein, A., J. Am. Chem. Soc. 109, 5649 (1987).Google Scholar
4. Woggon, U., Petri, W., Dinger, A., Petillon, S., Hetterich, M., Grun, M., O'Donnell, K. P., Kalt, H., and.Klingshirn, C., Phys. Rev. B 55 (3), 1364 (1997).Google Scholar
5. Tian, Yongchi, J. Phys. Chem. 100, 8927 (1996).Google Scholar
6. Zhou, H. S., Honma, I., Haus, J. W., Sasabe, H., Komiyama, H., J. of Lumin. 70, 2 (1996).Google Scholar
7. Mews, A., Kadavanich, A. V., Banin, U., Alivisatos, A. P., Phys. Rev. B53 (20), 13242 (1996).Google Scholar
8. Eychmüller, A., Mews, A., Weller, H., Chem. Phys. Letters. 208, (1) 59 (1993).Google Scholar
9. Lifshitz, E., Dag, I., Litvin, I. D., Hodes, G., J. Phys. Chem. (1998) in press.Google Scholar
10. Lifshitz, E., Litvin, I. D., Porteanu, H., Chem. Phys. Lett. 11591, (1998) in press.Google Scholar
11. Hopfield, J. J. and Tomas, D. J., Phys. Rev. B122, 35 (1961).Google Scholar
12. Nirmal, M., Norris, D. J., Kuno, M., Bawendi, M. G., Efros, Al. L. and Rosen, M., Phys. Rev. Lett. 75, 3728 (1995).Google Scholar