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Optical, Vibrational and Surface Properties of SiC

Published online by Cambridge University Press:  25 February 2011

W. J. Choyke
W. J. Choyke*
Affiliation:
University of Pittsburgh and Westinghouse Research and Development Center, Pittsburgh, PA (15260)/(15235)
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Abstract

A short historical introduction concentrates on key experimental and theoretical developments prior to the mid-seventies which form the basis of our present understanding of the semiconducting and optical properties of the polytypes of SiC. Selected research of the last decade is reviewed. Finally, we discuss our on-going surface and defect studies in both epitaxial single crystal films of 3C SiC and other hexagonal SiC polytypes.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 97: Symposium I – Novel Refractory Semiconductors , 1987 , 207
Copyright
Copyright © Materials Research Society 1987

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References

REFERENCES

1. Choyke, W.J., Mat. Res. Bull. 4, 141 (1969).Google Scholar
2. Choyke, W.J. and Patrick, Lyle, in Silicon Carbide 1973, (University of South Carolina Press, Columbia, SC, 1974), p. 261.Google Scholar
3. Choyke, W.J., Inst. Phys. Conf. Ser. No. 31, 58 (1977).Google Scholar
4. Choyke, W.J., XX Colloquium Spectroscopicum Internationale and 7th International Conference on Atomic Spectroscopy, Praha, p. 38 5 (1977).Google Scholar
5. Si Supplement, Vol. B3, Gmelin Handbook of Inorganic Chemistry, 8th Ed., (Springer-Verlag, 1986).Google Scholar
6. Round, H.J., Electrical World, 309 (1907).Google Scholar
7. Coblentz, W.W., Investigations of Infra-red Spectra, Part III and IV, Carnegie Institution of Washington, Dec. 1906.Google Scholar
8. Coblentz, W. W., Supplementary Investigations of Infra-red Spectra, Parts V, VI, VII, Carnegie Institution of Washington (1908).Google Scholar
9. Weigel, O., Uber Einige Physikalische Eigenschaften Des Carborunds, (Marburg,1915), Nachr. Ges. Wiss. Gottingen, 264 (1915).Google Scholar
10. Choyke, W.J. and Palik, E.D. in Handbook of Optical Constants of Solids, Palik, E.D., Ed., (Academic Press, Inc., 1985), p. 587.Google Scholar
11. Rehn, Victor, Stanford, J.L., Jones, V.O. and Choyke, W.J., Physics of Semiconductors, Proc. of the 13th Int. Conf., (Rome,1976), Ed. Fumi, F.G, p. 985.Google Scholar
12. Choyke, W.J., Farich, R.F. and Hoffman, R.A., Appl.Optics 15, 2006 (1976).Google Scholar
13. Rehn, Victor, Stanford, J.L., Baer, A.D., Jones, V.O. and Choyke, W.J., Appl. Opt. 16, 111 (1977).Google Scholar
14. Choyke, W.J., Partlow, W.D., Supertzi, E.P., Venskytis, F.J. and Brandt, G.B., Appl. Opt., 16, 2013 (1977).Google Scholar
15. Rehn, Victor and Choyke, W.J., Nucl. Inst. and Methods 177, 173 (1980).Google Scholar
16. Mrowka, S., Jelinsky, P., Bowyer, S., Sanger, G. and Choyke, W.J., SPIE Proc., 597 (1986).Google Scholar
17. Spitzer, W.G., Kleinman, D. and Walsh, D., Phys. Rev. 113, 127 (1959).Google Scholar
18. Spitzer, W.G., Kleinman, D.A., Frosh, C.J. and Walsh, D.J., in Silicon Carbide, a High Temperature Semiconductor, edited by O'Connor, J.R. and Smiltens, J. (Pergamon, 1960), p. 347.Google Scholar
19. Lipson, H.G., in Silicon Carbide, A High Temperature Semiconductor, edited by O'Connor, J.R. and Smiltens, J. (Pergamon, 1960), p. 371.Google Scholar
20. Patrick, L. and Choyke, W.J., Phys. Rev. 123, 813 (1961).Google Scholar
21. Choyke, W.J. and Patrick, Lyle, Phys. Rev. 105, 1721 (1961).Google Scholar
22. Hemstreet, L.A. and Fong, C.Y., in Silicon Carbide 1973 (University of South Carolina Press, Columbia, SC, 1974),284.Google Scholar
23. Herman, F., Van Dyke, J.P. and Kortum, R.L., Mat. Res. Bull. 4, 167 (1969).Google Scholar
24. Li, Yuan and Lin-Chung, P.J., submitted to Phys. Rev. (1986).Google Scholar
25. McLean, T.P., Progress in Semiconductors, 5, 55 (Heywood and Co., Ltd., London), 1960.Google Scholar
26. Feldman, D.W., Parker, James H. Jr., Choyke, W.J. and Lyle Patrick, Phys. Rev. 170, 698 (1968).Google Scholar
27. Feldman, D.W., Parker, James H. Jr., Choyke, W.J. and Lyle Patrick, Phys. Rev. 173, 787 (1968).Google Scholar
28. Patrick, Lyle, Phys. Rev. 167, 809 (1968).Google Scholar
29. Jones, H., The Theory of Brillouin Zones and Electronic States in Crystals, (North-Holland Publishing Co., Amsterdam), 1960.Google Scholar
30. Nakashima, S., Katahama, H., Nakakura, Y. and Mitsuishi, A., Phys. Rev. B 33, 5721 (1986).Google Scholar
31. Dean, P.J., Herbert, D.C., Bimberg, D. and Choyke, W.J., Phys. Rev. Lett. 37, 1635 (1976).Google Scholar
32. Herbert, D.C., Dean, P.J. and Choyke, W.J., Solid State Communications 24, 383 (1977).Google Scholar
33. Dean, P.J., Choyke, W.J. and Patrick, Lyle, Jour. Lum. 15, 299 (1977).Google Scholar
34. Bimberg, D., Skolnick, M.S. and Choyke, W.J., Phys. Rev. Lett. 40, 56 (1978).Google Scholar
35. Skolnick, M.S., Bimberg, D. and Choyke, W.J., Solid State Communications 28, 865 (1978).Google Scholar
36. Bimberg, D., Sander, L.M., Skolnick, M.S., Rossler, U. and Choyke, W.J., Jour. Lum. 18/19, 542 (1979).Google Scholar
37. Humphreys, R.G., Bimberg, D. and Choyke, W.J., J. Phys. Soc. Japan 49, 519 (1980).Google Scholar
38. Humphreys, R.G., Bimberg, D. and Choyke, W.J., Solid State Communications 39, 163 (1981).Google Scholar
39. Gorban, I.S. and Mishinova, G.N., Sov. Phys. Solid State 24, 142 (1983).Google Scholar
40. Gorban, I.S., Gubanov, V.A., Lysenko, V.G., Pletyushkin, A.A. and Timofeev, V.B., Sov. Phys. Solid State 26, 1385 (1984).Google Scholar
41. Vakulenko, V.A., Gorban, I.S., Gubanov, V.A. and Pletyushkin, A.A., Sov. Phys. Solid State 26, 2139 (1984).Google Scholar
42. Kulakovskii, V.D. and Gubanov, V.A., Sov. Phys. JETP 61, 550 (1985).Google Scholar
43. Kulakovskii, V.D. and Gubanov, V.A., Sov. Phys. Solid State 27, 1359 (1985).Google Scholar
44. Gorban, I.S. and Krokhmal, A.P., Sov. Phys. Solid State 28, 1279 (1986).Google Scholar
45. Olego, D. and Cardona, M., Phys. Rev. B25, 1151 (1982).Google Scholar
46. Olego, D., Cardona, M., Vogl, P., Phys. Rev. B25, 3878 (1982).Google Scholar
47. Olego, D. and Cardona, M., Phys. Rev. B25, 3889 (1982).Google Scholar
48. Nakashima, S., Katahama, H., Nakakura, Y. and Mitsuishi, A., Phys. Rev. B33, 5721 (1986).Google Scholar
49. Okumura, H., Sakuma, E., Lee, J.H., Mukaida, H., Misawa, S., Endo, K. and Yoshida, S., J. Appl. Phys. 61, 1134 (1987).Google Scholar
50. Strossner, K., Cardona, M., Choyke, W.J. (to be published).Google Scholar
51. Dang, L.S., Lee, K.M., Watkins, G.D. and Choyke, W.J., Phys. Rev. Lett. 45, 390 (1980).Google Scholar
52. Dang, L.S., Lee, K.M., Watkins, G.D. and Choyke, W.J., Solid State Communications 37, 551 (1981).Google Scholar
53. Vainer, V.S. and Ll'in, V.A., Sov. Phys. Solid State 23, 1432 (1981).Google Scholar
54. Vainer, V.S. and Ll'in, V.A., Sov. Phys. Solid State 23, 2126 (1981).Google Scholar
55. Zubatov, A.G., Stepanov, V.G., Yodakov, Y.A. and Mokhov, E.N., Sov. Phys. Solid State 24, 504 (1982).Google Scholar
56. Lee, K.M., Dang, L.S., Watkins, G.D. and Choyke, W.J., Phys. Rev B32, 2273 (1986).Google Scholar
57. Petersen, J.W., Weyer, G., Nielsen, H.L., Damgaard, S., Choyke, W.J. and Andreasen, H., Hyperfine Interactions 23, 17 (1985).Google Scholar
58. Patterson, B.D., Baumeler, H.P., Keller, H., Kiefl, R.F., Kundig, W., Odermatt, W., Schneider, J.W., Choyke, W.J., Estle, T.L., Spencer, D.P., Blazey, K.W., Savic, I.M., Proc. 4th Int. Conf., μSR, Uppsala, Sweden (1986).Google Scholar
59. Gorban, I.S., Suleimanov, Y.M. and Shvaidak, Y.M., Sov. Phys. Semiconductors 3, 101 (1969).Google Scholar
60. Gorban, I.S., Shvaidak, Y.M., Sov. Phys. Solid State 11, 2456 (1970).Google Scholar
61. Lisita, M.P., Vakulenko, O.V., Krasnov, Y.S. and Solodov, V.N., Sov. Phys. Semiconductors 5, 1785 (1972).Google Scholar
62. Hagen, S.H. and van Kemenade, A.W.C., Jour. Lum. 9, 9 (1974).Google Scholar
63. Gorban, I.S. and Slobodyanyuk, A.V., Sov. Phys. Solid State 16, 173 (1974).Google Scholar
64. Gorban, I.S. and Slobodyanyuk, A.V., Sov. Phys. Solid State 15, 1925 (1974).Google Scholar
65. Gorban, I.S. and Slobodyanyuk, A.V., Sov. Phys. Solid State 16, 1163 (1974).Google Scholar
66. Gorban, I.S. and Slobodyanyuk, A.V., Sov. Phys. Solid State 21, 120 (1975).Google Scholar
67. Gorban, I.S., Gorchev, V.F. and Slobodyanyuk, A.V., Sov. Phys. Semicond. 9, 1271 (1975).Google Scholar
68. Vakulenko, O.V., Smykalo, Y.I. and Shutov, B.M., Sov. Phys. Solid State 17, 1422 (1975).Google Scholar
69. Altaiskii, Y.M., Zuev, V.L. and Rybina, E.I., Sov. Phys. Semicond. 10, 1052 (1976).Google Scholar
70. Vakulenko, O.V. and Guseva, O.A., Sov. Phys. Semicond. 15, 886 (1981).Google Scholar
71. Kholuyanov, G.F., Vodakov, Y.A., Violin, E.E., Lomakina, G.A. and Mokhov, E.N., Sov. Phys. Semicond. 5, 32 (1971).Google Scholar
72. Tairov, Y.M. and Tsvetkov, V.F., Sov. Phys. Semicond. 5, 268 (1971).Google Scholar
73. Vodakov, Y.A., Kholuyanov, G.F. and Mokhov, E.N., Sov. Phys. Semicond. 5, 1409 (1972).Google Scholar
74. Kuwabara, H., Shiokawa, S. and Yamada, S., Phys. Stat. Sol. (a) 16, K67 (1973).Google Scholar
75. Kuwabara, H. and Yamada, S., Phys. Stat. Sol. (a) 30, 739 (175).Google Scholar
76. Patrick, L. and Choyke, W.J., Phys. Rev. B 10, 5091 (1974).Google Scholar
77. Gusev, V.M., Demakov, K.D., Kosaganova, M.G., Reifman, M.B. and Stolyarova, V.G., Sov. Phys. Semicond. 9, 820 (1975).Google Scholar
78. Tairov, Y.M., Khlebnikov, I.I. and Tsvetkov, V.F., Soy. Phys. Semicond. 8, 1159 (1975).Google Scholar
79. Harris, A.J. and Thomas, H., Phys. Stat. Sol. (a) 36, 365 (1976).Google Scholar
80. Suzuki, A., Matsunami, H. and Tanaka, T., Jour. Electrochemical Soc. 124, 241 (1977).Google Scholar
81. Vodakov, Y.A., Zhumaev, N., Zverev, B.P., Lomakina, G.A., Mokhov, E.N., Oding, V.G., Semmenov, V.V. and Simakhin, Y.F., Soy. Phys. Semicond. 11, 214 (1977).Google Scholar
82. Gorban, I.S. and Krokhmal, A.P., Soy. Phys. Semicond. 12, 821 (1978).Google Scholar
83. Ikeda, M., Matsunami, H. and Tanaka, T., Jour. Lum. 20, 111 (1979).Google Scholar
84. Ballandovich, V.S., Tairov, Y.M. and Violina, G.N., Phys. Stat. Sol. (a) 65, 709 (1981).Google Scholar
85. Gusev, V.M., Demakov, K.D., Efimov, V.M., Ionov, V.I., Kosaganova, M.G., Prokofeva, N.L., Stolyarova, V.G. and Chekushkin, Y.N., Soy. Phys. Semicond. 15, 1413 (1981).Google Scholar
86. Sussmann, R.S. and Ogden, R., Phil. Mag. B44, 137 (1981).Google Scholar
87. Altaiskii, Y.M., Zuev, V.L. and Rybina, E.I., Sov. Phys. Semicond. 16, 963 (1982).Google Scholar
88. Verenchikova, R.G., Vodakov, Y.A., Litvin, D.P., Mokhov, E.N., Ramm, M.G., Sankin, V.I., Ostroumov, A.G. and Sokolov, V.I., Sov. Phys. Semicond. 16, 1309 (1982).Google Scholar
89. Radovanova, E.I., Verenchikova, R.G. and Vodakov, Y.A., Sov. Phys. Semicond.17, 701 (1983).Google Scholar
90. Gavrilenko, V.I., Gorban, I.S., Klyul, N.I., Litovchenko, V.G. and Skirda, A.S. 18 (1984).Google Scholar
91. Vakulenko, Y.A., Gorban, I.S., Gubanov, V.A. and Pletyushkin, A.A., Soy. Phys. Solid State 27, 173 (1985).Google Scholar
92. Vakulenko, Y.A., Gorban, I.S., Gubanov, V.A. and Pletyushkin, A.A., Sov. Phys. Solid State 27, 1342 (1985).Google Scholar
93. Vadakov, Y.A., Litvin, D.P., Sankin, V.I., Mokhov, E.N. and Roenkov, A.D., Sov. Phys. Semicond. 19, 502 (1985).Google Scholar
94. Choyke, W.J. and Patrick, L., Phys. Rev. B4, 1843 (1971).Google Scholar
95. Gorban, I.S., Kravets, V.A., Mishinova, G.N. and Nazarenko, K.V., Sov. Phys. Semicond. 10, 1254 (1976).Google Scholar
96. Kodrau, N.V. and Makarov, V.V., Sov. Phys. Semicond. 11, 569 (1977).Google Scholar
97. Dean, P.J., Bimberg, D. and Choyke, W.J., Inst. Phys. Conf. Ser. No. 46, 447 (1979).Google Scholar
98. Vodakov, Y. A., Mokhov, E.N., Ramm, M.G., Roenkov, A.D., Kristall und Technik 14, 729 (1979).Google Scholar
99. Ikeda, M., Matsunami, H. and Tanaka, T., Jpn. J. Appl. Phys. 19, 1201 (1980).Google Scholar
100. Kodrau, N.V. and Makarov, V.V., Sov. Phys. Semicond. 15, 960 (1981).Google Scholar
101. Kodrau, N.V. and Makarov, V.V., Sov. Phys. Semicond. 15, 813 (1981).Google Scholar
102. Vodakov, Y.A., Lomakina, G.A. and Mokhov, E.N., Sov. Phys. Solid State 24, 780 (1982).Google Scholar
103. Gusev, V.M., Demakov, K.D. and Stolyarova, V.G., Radiation Effect 69, 307 (1983).Google Scholar
104. Suleimanov, Y.M., Grekhov, A.M. and Grekhov, V.M., Sov. Phys. Solid State 25, 1060 (1983).Google Scholar
105. Levin, V.I., Tairov, Y.M. and Tsvetkov, V.F., Sov. Phys. Semicond. 18, 747 (1984).Google Scholar
106. Violina, E.E., Demakov, K.D., Kal'nin, A.A., Nolbert, F., Potapov, E.N. and Tairov, Y.M., Sov. Phys. Solid State 26, 960 (1984). J.A. Van Vechten, Jour. Crystal Growth 71, 326 (1985).Google Scholar
107. Suleimanov, Y.M., Grekhov, V.M., Demakov, K.D. and Plyuto, I.V., Sov. Phys. Solid State 27, 1910 (1985).Google Scholar
108. Vodakov, Y.A., Lomakina, G.A., Mokhov, E. N., Oding, V.G., Ram, M.G. and Sokolov, V.I., Sov. Phys. Semicond. 20, 900 (1986).Google Scholar
109. Lin-Chung, P.J. and Li, Y., Materials Science Forum 10–12, 1247 (1986).Google Scholar
110. Bozso, F., Muehlhoff, L., Trenary, M.,Choyke, W.J. and Yates, J.T., J. Vac. Sci. Technol. A 2, 1271 (1984).Google Scholar
111. Bozso, F., Yates, J.T., Choyke, W.J., Muehlhoff, L., J. Appl. Phys. 57, 2771 (1985).Google Scholar
112. Muehlhoff, L., Choyke, W.J., Bozack, M.J. and Yates, J.T., J. Appl. Phys. 60, 2842 (1986).Google Scholar
113. Muehlhoff, L., Bozack, M.J., Choyke, W.J. and Yates, J.T., J. Appl. Phys. 60, 2558 (1986).Google Scholar
114. Bozack, M.J., Taylor, P.A., Choyke, W.J., Yates, J.T., Surface Science 177, 1933 (1986).Google Scholar
115. Bozack, M.J., Muehlhoff, L., Russell, J.N., Choyke, W.J. and Yates, J.T., J. Vac. Sci. Technol. A5,1 (1987).Google Scholar
116. Bozack, M.J., Taylor, P.A., Choyke, W.J. and Yates, J.T., Surface Science 179, 132 (1987).Google Scholar
117. Bozack, M.J., Dresser, M.J., Choyke, W.J. and Yates, J.T. (to be published in Surface Science 1987).Google Scholar
118. Kaplan, R., Wagner, R.J., Kim, H.J. and Davis, R.F., Solid State Communications 55, 67 (1985).Google Scholar
119. Freitas, J.A., Bishop, S.G., Addamiano, A., Klein, P.H., Kim, H.J. and Davis, R., Mat. Res. Soc. Symp. Proc. 46, 581 (1985).Google Scholar
120. Feng, Z.C., Mascarenhas, A., Choyke, W.J. and Powell, J.A., Bull. Am. Phys. Soc. 31, #3, 351 (1986).Google Scholar
121. Choyke, W.J., Feng, Z.C. and Powell, J.A., Bull. Am. Phys. Soc. 32, # 3, 651 (1987).Google Scholar
122. Freitas, J.A., Bishop, S.G., Edmond, J.A., Ryu, J. and Davis, R.F., J. Appl. Phys. 61, p. 2011 (1987). Z.C. Feng, A. Mascarenhas, W.J. Choyke and J.A. Powell, Bull. Am. Phys. Soc. 31, # 3, 351 1986).Google Scholar