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Optical, Structural, and Electrical Properties of Vanadium Dioxide Grown on Sapphire Substrates with Different Crystallographic Orientations

Published online by Cambridge University Press:  11 December 2012

M. Nazari
Affiliation:
Department of Physics and Nano Tech Center, Texas Tech University, Lubbock, TX 79409 Nano Tech Center, Texas Tech University, Lubbock, TX 79409
Y. Zhao
Affiliation:
Nano Tech Center, Texas Tech University, Lubbock, TX 79409 Department of Electrical Engineering, Texas Tech University, Lubbock, TX 79409
Y. Zhu
Affiliation:
Nano Tech Center, Texas Tech University, Lubbock, TX 79409 Department of Electrical Engineering, Texas Tech University, Lubbock, TX 79409
V. V. Kuryatkov
Affiliation:
Nano Tech Center, Texas Tech University, Lubbock, TX 79409 Department of Electrical Engineering, Texas Tech University, Lubbock, TX 79409
A. A. Bernussi
Affiliation:
Nano Tech Center, Texas Tech University, Lubbock, TX 79409 Department of Electrical Engineering, Texas Tech University, Lubbock, TX 79409
Z. Fan
Affiliation:
Nano Tech Center, Texas Tech University, Lubbock, TX 79409 Department of Electrical Engineering, Texas Tech University, Lubbock, TX 79409
M. Holtz
Affiliation:
Department of Physics and Nano Tech Center, Texas Tech University, Lubbock, TX 79409 Nano Tech Center, Texas Tech University, Lubbock, TX 79409
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Abstract

The phase transition of VO2 grown on sapphire having different crystallographic growth planes is examined experimentally. Measurements of electrical resistivity are compared with spectroscopic ellipsometry studies, to obtain complex index of refraction and plasma frequency, and transmission in the terahertz frequency range, each as a function of temperature.

Type
Articles
Copyright
Copyright © Materials Research Society 2012 

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References

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