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Optical Properties of Zn0.46Cd0.54Se/Zn0.24Cd0.25Mg0.51Se Multiple Quantum Wells for Infrared Photodetector Applications

Published online by Cambridge University Press:  01 February 2011

Xuecong Zhou
Affiliation:
cong999@yahoo.com, The City College of New York, Physics Department, IUSL, 138th St. & Convent Ave., New York, NY, 10031, United States
Shengkun Zhang
Affiliation:
skzhang@sci.ccny.cuny.edu, The City College of New York, Physics Department, IUSL, New York, NY, 10031, United States
Hong Lu
Affiliation:
hlu@ccny.cuny.edu, The City College of New York, Chemistry Department, New York, NY, 10031, United States
Aidong Shen
Affiliation:
aidong@sci.ccny.cuny.edu, The City College of New York, Chemistry Department, New York, NY, 10031, United States
Wubao Wang
Affiliation:
wwang@sci.ccny.cuny.edu, The City College of New York, Physics Department, IUSL, New York, NY, 10031, United States
Chunying Song
Affiliation:
chun-ying.song@nrc-cnrc.gc.ca, National Research Council of Canada, Institute for Microstructural Sciences, Ottawa, K1A0R6, Canada
Huichun Liu
Affiliation:
h.c.liu@nrc-cnrc.gc.ca, National Research Council of Canada, Institute for Microstructural Sciences, Ottawa, K1A0R6, Canada
Bidyut B. Das
Affiliation:
barikul@sci.ccny.cuny.edu, The City College of New York, Physics Department, IUSL, New York, NY, 10031, United States
Nicky Okoye
Affiliation:
nokoye00@ccny.cuny.edu, The City College of New York, Physics Department, IUSL, New York, NY, 10031, United States
Maria C. Tamargo
Affiliation:
tamar@sci.ccny.cuny.edu, The City College of New York, Chemistry Department, New York, NY, 10031, United States
Robert R. Alfano
Affiliation:
ralfano@ccny.cuny.edu, The City College of New York, Physics Department, IUSL, New York, NY, 10031, United States
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Abstract

Recently, lattice-matched Zn0.46Cd0.54Se/ZnCdMgSe multiple-quantum-wells (MQWs) have been recognized as very promising materials to fabricate intersubband (ISB) devices such as quantum cascade lasers and mid-infrared photoconductors. These structures have important applications in biological and chemical detections. The ISB transition covers a wide mid-infrared wavelength range from 1.3 μm to a few tens of μm.

In this work, two heavily doped n-Zn0.46Cd0.54Se/Zn0.24Cd0.25Mg0.51Se MQW structures have been grown on InP (001) substrate by molecular beam epitaxy. Temperature dependent steady-state photoluminescence (SSPL), temperature dependent time- resolved photoluminescence (TRPL), and Fourier transform infrared spectroscopy (FTIR) were performed to characterize their interband and ISB properties. These two MQW samples have similar structures except different well widths and different number of periods. The integrated SSPL intensities and the PL decay times of the MQWs were measured as functions of temperature in the range from 77 K to 290 K. The luminescence efficiency of the sample with 28 Å well width is larger than that of the sample with 42 Å well width although both samples exhibit similar temperature dependence of PL intensity. Time-resolved PL measurements show that the PL decay times of both samples decrease with increasing temperature. From 77 K to 290 K, the decay time of the sample with 28 Å well width is in the range of 440 ps ∼ 120 ps and is much longer than that of the sample with 42 Å well width, which is in the range of 65 ps ∼ 25 ps. Strong non-radiative recombinations dominate the luminescence behavior of the wider MQWs. Intersubband absorption spectra of the samples were measured by FTIR and show peak absorption at wavelengths of 3.99 μm and 5.35 μm for the MQWs with well widths of 28 Å and 42 Å, respectively, falling within the 3-5 Åm range, which is of great interest for the infrared photodetector applications.

Type
Research Article
Copyright
Copyright © Materials Research Society 2007

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