Hostname: page-component-848d4c4894-r5zm4 Total loading time: 0 Render date: 2024-06-23T04:57:36.539Z Has data issue: false hasContentIssue false
  • English
  • Français

Optical Properties Of Si Nanocrystals Formed In Si02 By Ion Implantation

Published online by Cambridge University Press:  10 February 2011

C. W. White ,
S. P. Withrow ,
A. Meldrum ,
J. D. Budai ,
D. M. Hembree ,
J. G. Zhu ,
D. O. Henderson  and
S. Prawerttt
C. W. White
Affiliation:
Oak Ridge National Laboratory, P. O. Box 2008, Oak Ridge, TN 37831-6057
S. P. Withrow
Affiliation:
Oak Ridge National Laboratory, P. O. Box 2008, Oak Ridge, TN 37831-6057
A. Meldrum
Affiliation:
Oak Ridge National Laboratory, P. O. Box 2008, Oak Ridge, TN 37831-6057
J. D. Budai
Affiliation:
Oak Ridge National Laboratory, P. O. Box 2008, Oak Ridge, TN 37831-6057
D. M. Hembree
Affiliation:
Oak Ridge Y-12 Plant, P. O. Box 2009, Oak Ridge, TN 37831-8244
J. G. Zhu
Affiliation:
New Mexico State University, P. O. Box 30001, Las Cruces, NM 88003
D. O. Henderson
Affiliation:
Fisk University, Nashville, TN
S. Prawerttt
Affiliation:
University of Melbourne, Parkville, Victoria, Australia
Get access

Abstract

Si nanocrystals formed in SiO2 by high-dose ion implantation and annealing give rise to strong optical absorption and intense photoluminescence (PL). The dose dependence of optical absorption provides evidence for size-dependent quantum confinement in the Si nanocrystals. PL peak energies are nearly independent of dose suggesting that surface or interface states play an important role in PL. Estimates of absorption bandgaps in the nanocrystals are given.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 507: Symposium A – Amorphous & Microcrystalline Silicon Technology 1998 , 1998 , 249
Copyright
Copyright © Materials Research Society 1998

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1 See numerous papers in “Advances in Microcrystalline and Nanocrystalline Semiconductors-1996,” ed. by Alivisatos, A. P., Fauchet, P., Shimizu, I., Collins, R., Shimuda, T., and Vial, J. C., Mater. Res. Soc. Symp. Proc. 452 (MRS, Pittsburgh, 1997).Google Scholar
2 Shimizu-Iwayama, T., Fujita, K., Nakao, S., Saitoh, K., Fujita, T., and Itoh, N., J. Appl. Phys. 75, 7779 (1994).Google Scholar
3 Min, K. S., Shcheglov, K. V., Yang, C. M., Atwater, H. A., Brongersma, M. L., and Polman, A., Appl. Phys. Lett. 69, 2033 (1996).Google Scholar
4 Mutti, P., Ghislotti, G., Bertoni, S., Bonoldi, L., Cerofolini, G. F., Meda, L., Grilli, E., and Guzzi, M., Appl. Phys. Lett. 66, 851 (1995).Google Scholar
5 Komoda, T., Kelly, J. P., Cristiano, F., Nejim, A., Hemment, P. L. F., Homewood, K. P., Gwilliams, R., Mynard, J. E., and Sealy, B. J., NucL. Instrum. Methods Phys. Res. B 96, 387 (1995).Google Scholar
6 Zhu, J. G., White, C. W., Budai, J. D., Withrow, S. P., and Chen, Y., J. Appl. Phys. 77, 4386 (1995).Google Scholar
7 Skorupa, W., Yankov, R. A., Tyschenko, I. E., Frob, H., Bohme, T., and Leo, K., Appl. Phys. Lett. 68, 2410 (1996).Google Scholar
8 Guha, S., Pace, M. D., Dunn, D. N., and Singer, I. L., Appl. Phys. Lett. 70, 1207 (1997).Google Scholar
9 Schuster, T., Dittrich, T., Porteanu, H. E., Fischer, T., Hechtl, E., Petrova-Koch, V., and Koch, F., Mater. Res. Soc. Symp. Proc. 452, 111 (1997).Google Scholar
10 Ghislotti, G., Nielsen, B., DiMauro, L. F., Sheey, B., Mutti, P., Pifferi, A., Taroni, P., Valentini, L., Corni, F., and Tonini, R., Mater. Res. Soc. Symp. Proc. 452, 105 (1997).Google Scholar
11 Kachurin, G. A., Zhuravlev, K. S., Pazdnikov, N. A., Leier, A. F., Tyschenko, I. E., Volodin, V. A., Skorupa, W., and Yankov, R. A., Nucl. Instrum. Methods Phys. Res. B 127/128, 583 (1997).Google Scholar
12 White, C. W., Budai, J. D., Withrow, S. P., Zhu, J. G., Pennycook, S. J., Zuhr, R. A., Hembree, D. M., Henderson, D. O., Magruder, R. H., Yacaman, M. J., Mondragon, G., and Prawer, S., Nucl. Instrum. Methods Phys. Res. B 127/128, 545 (1997).Google Scholar
13 Mott, N. F. and Davis, E. A., Electronic Properties in Non-Crystalline Materials (Clarendon, Oxford, England, 1979) chapter 6.Google Scholar
14 Canhan, L. T., Appl. Phys. Lett. 57, 1046 (1990).Google Scholar
15 See Collins, R. T., Fauchet, P. M., and Tischler, M. A., Physics Today, Jan. 1997, p. 25 and references therein.Google Scholar
16 Koch, F., Petrova-Koch, V., and Muschik, T., J. of Luminescence 57, 271 (1993).Google Scholar
17 Kanemitsu, Y., Physics Reports 263, 1 (1995).Google Scholar
18 See for example Prokes, S. M., J. Mater. Res. 11, 305 (1996).Google Scholar
19 Veprek, S., Wirschem, T., Rtickschloss, M., Ossadnik, C., Dian, J., Perna, S., and Gregora, I., Mater. Res. Soc. Symp. Proc. 405, 401 (1996).Google Scholar
20 Allen, G., Delerue, C., and Lannoo, M., Phys. Rev. Lett. 76, 2961 (1996).Google Scholar