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Optical Properties of Multiple, Delta-doped Si:B/Si Layers

Published online by Cambridge University Press:  01 February 2011

Han-Yun Chang ,
Eun-Kyu Lee ,
Boris V. Kamenev ,
Jean-Marc Baribeau ,
David J. Lockwood  and
Leonid Tsybeskov
Han-Yun Chang
Affiliation:
hanyun.chang@njit.edu, New Jersey Institute of Technology, Electrical and Computer Engineering, University Heights, Newark, NJ, 07102-1982, United States
Eun-Kyu Lee
Affiliation:
ekl2@njit.edu, New Jersey Institute of Technology, Department of Electrical and Computer Engineering, University Heights, Newark, NJ, 07102-1982, United States
Boris V. Kamenev
Affiliation:
kamenev@adm.njit.edu, New Jersey Institute of Technology, Department of Electrical and Computer Engineering, University Heights, Newark, NJ, 07102-1982, United States
Jean-Marc Baribeau
Affiliation:
Jean-Marc.Baribeau@nrc-cnrc.gc.ca, National Research Council Canada (NRC), Institute for Microstructural Sciences (IMS), Ottawa, K1A 0R6, Canada
David J. Lockwood
Affiliation:
David.Lockwood@nrc-cnrc.gc.ca, National Research Council Canada (NRC), Institute for Microstructural Sciences (IMS), Ottawa, K1A 0R6, Canada
Leonid Tsybeskov
Affiliation:
Tsybesko@njit.edu, New Jersey Institute of Technology, Department of Electrical and Computer Engineering, University Heights, Newark, NJ, 07102-1982, United States
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Abstract

Reliable fabrication of high-speed, delta-doped transistors and better understanding of two-dimensional metal-insulator transitions can be achieved using silicon molecular beam epitaxy (MBE). However, this fabrication technique should be performed with care, avoiding dopant segregation on epitaxial Si surfaces and improving the doping efficiency. Here we report comprehensive structural and optical investigations of MBE-grown Si/delta-doped Si:B multilayer structures. Measurements of Auger electron spectroscopy, Raman scattering, optical reflection and photoluminescence are performed. Our results indicate nearly metallic conductivity at room temperature with metal-insulator phase transition near T ∼100 K. In contrast to recently reported data, no enhancement of photoluminescence at room temperature is found. Occasionally, a few samples in specific areas exhibit strong photoluminescence at 1.4-1.6 micron attributed to structural defects, most likely due to B segregation.

Keywords

luminescencedopantmolecular beam epitaxy (MBE)
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 958: Symposium L – Group IV Semiconductor Nanostructures—2006 , 2006 , 0958-L10-23
Copyright
Copyright © Materials Research Society 2007

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References

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