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Optical Properties of Heavily Doped n-type CdSe Quantum Dots for Intersubband Device Applications

Published online by Cambridge University Press:  01 February 2011

Shengkun Zhang ,
Xuecong Zhou ,
Aidong Shen ,
Wubao Wang ,
Robert Alfano ,
Hong Lu ,
William Charles ,
I Yokomizo ,
Maria Tamargo  and
K Franz
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Shengkun Zhang
Affiliation:
skzhang@sci.ccny.cuny.edu, City College of New York, Physics, 160 Convent Avenue, New York, NY, 10031, United States
Xuecong Zhou
Affiliation:
xzhou@sci.ccny.cuny.edu, City College of New York, Physics Department, 160 Convent Avenue, New York, NY, 10031, United States
Aidong Shen
Affiliation:
aidong@sci.ccny.cuny.edu, City College of New York, Chemistry Department, 160 Convent Avenue, New York, NY, 10031, United States
Wubao Wang
Affiliation:
wwang@sci.ccny.cuny.edu, City College of New York, Physics Department, 160 Convent Avenue, New York, NY, 10031, United States
Robert Alfano
Affiliation:
alfano@sci.ccny.cuny.edu, City College of New York, Physics Department, 160 Convent Avenue, New York, NY, 10031, United States
Hong Lu
Affiliation:
Hlu@ccny.cuny.edu, City College of New York, Chemistry Department, 160 Convent Avenue, New York, NY, 10031, United States
William Charles
Affiliation:
wocharles99@aol.com, City College of New York, Chemistry Department, 160 Convent Avenue, New York, NY, 10031, United States
I Yokomizo
Affiliation:
Yokomizo@sci.ccny.cuny.edu, City College of New York, Chemistry Department, 160 Convent Avenue, New York, NY, 10031, United States
Maria Tamargo
Affiliation:
Tamar@sci.ccny.cuny.edu, City College of New York, Chemistry Department, 160 Convent Avenue, New York, NY, 10031, United States
K Franz
Affiliation:
kfranz@Princeton.EDU, Princeton University, Department of Electrical Engineering, Princeton, NJ, 08544, United States
C Gmachl
Affiliation:
cgmachl@Princeton.EDU, Princeton University, Department of Electrical Engineering, Princeton, NJ, 08544, United States
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Abstract

In this research, interband and intersubband optical properties of heavily doped n-type CdSe quantum dots were investigated by temperature dependent photoluminescence (PL) spectroscopy, picosecond time-resolved PL spectroscopy and Fourier transform infrared (FTIR) spectroscopy. Two doped and one undoped CdSe quantum dot samples with multiple QD layers were grown over ZnCdMgSe barrier layers on InP (001) substrate by molecular beam epitaxy. Heavy doping leads to decreasing of activation energy of nonradiative recombination centers, however, does not affect the luminescence efficiency of doped quantum wells. Time resolved PL experiments show that the PL decay times of the doped samples have weak dependence on well width and are much longer than that of the undoped sample. The two doped CdSe QD samples show strong Intersubband IR absorption that peaked at 2.54 μm, 2.69 μm and 3.51 μm. The ISB absorption is found to be strongly polarization dependent due to the large size of the QDs.

Keywords

optical propertiesII-VIinfrared (IR) spectroscopy
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 959: Symposium M – Quantum Dots—Growth, Behavior and Applications , 2006 , 0959-M06-05
Copyright
Copyright © Materials Research Society 2007

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References

REFERENCES

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