Hostname: page-component-77c89778f8-fv566 Total loading time: 0 Render date: 2024-07-18T06:39:41.775Z Has data issue: false hasContentIssue false
  • English
  • Français

Optical Photoluminescence due to the Recombination of Donor-Acceptor Pairs in Porous Silicon

Published online by Cambridge University Press:  17 March 2011

J. P. Zheng  and
X. Wei
J. P. Zheng
Affiliation:
Department of Electrical and Computer Engineering, Florida A&M University and Florida State University, Tallahassee, FL 32310, USA
X. Wei
Affiliation:
The National High Magnetic Field Laboratory, Florida State University, Tallahassee, FL 32310, USA
Get access

Abstract

The temperature dependence of the intensity, peak-wavelength, and bandwidth of photoluminescence (PL) spectra was studied in the porous silicon (PS) sample. To explain the observed temperature dependence, we proposed a model for the origin of the PL in PS. At low temperatures, the photon emission was dominated by the recombination of donor-acceptor pairs with ionization energies of about 4 meV. The donor and the acceptor were spatially separated with a distance of about 3.8 nm, which was about the crystalline size of the PS. Whereas at high temperatures where thermal energy exceeded the ionization energy, the photon emission was mainly from the exciton recombination.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 638: Symposium F – Microcrystaline & Nanocrystalline Semiconductors-2000 , 2000 , F3.4.1
Copyright
Copyright © Materials Research Society 2001

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Canham, L. T., Appl. Phys. Lett. 57, 1046 (1990).Google Scholar
2. Richter, A., Steiner, P., Kozlowski, F., Lang, W., IEEE Electron Device Lett. Vol.12, 691 (1991).Google Scholar
3. Lazarouk, S., Jaguire, P., Katsouba, S., Masini, G., Monica, S. La, Maiello, G., and Ferrari, A., Appl. Phys. Lett. 68, 2108 (1996).Google Scholar
4. Zheng, J. P., Jiao, K. L., Shen, W. P., Anderson, W. A., and Kwok, H. S., Appl. Phys. Lett. 61, 459 (1992).Google Scholar
5. Zheng, J. P., Charbel, P.T., and Kwok, H.S., Electrochem. and Solid-State Lett. 3, 338 (2000).Google Scholar
6. Loni, A. et al. , Thin Solid Films, 276, 143 (1995).Google Scholar
7. Jessing, J., Parker, D., Weichoid, M., J. Vac. Sci. Technol. B, vol.14, 1899 (1996).Google Scholar
8. Menna, P., Francia, G. Di, Ferrara, V. La, Sol. Energy Mater. Sol. Cells, vol.37, 13 (1995).Google Scholar
9. Cullis, A. G., Canham, L. T., and Calcott, P. D. J., J. Appl. Phys. 82, 909 (1997).Google Scholar
10. Mauckner, G., Thonke, K., Baier, T., Walter, T., and Sauer, R., J. Appl. Phys. 75, 4167 (1994).Google Scholar
11. Kanemitsu, Y., Uto, H., Masumoto, Y., Matsumoto, T., Futagi, T., and Mimura, H., Phys. Rev. B. 48, 2827 (1993).Google Scholar
12. Kanemitsu, Y., Phys. Rev. B, 48, 12357 (1993).Google Scholar
13. Koyama, H., Ozaki, T., and Koshida, N., Phys. Rev. B, 52, 11561 (1995).Google Scholar
14. Suemoto, T., Tanaka, K., and Nakajima, A., Phys. Rev. B, 49, 11005 (1994).Google Scholar
15. John, G. C. and Singh, V. A., Phys. Rev. B, 54, 4416 (1996).Google Scholar
16. Kapoor, M., Singh, V. A., and Johri, G. K., Phys. Rev. B, 61, 1941 (2000).Google Scholar
17. Anderson, O. K. and Veje, E., Phys. Rev. B, 53, 15643 (1996).Google Scholar
18. Zheng, X. L., Wang, W., and Chen, H. C, Appl. Phys. Lett. 60, 986 (1992).Google Scholar
19. Brus, L. E., J. Chem. Phys. 80, 4403 (1984).Google Scholar
20. Lehmann, V. and Gosele, U., Appl. Phys. Lett. 58, 856 (1991).Google Scholar
21. Pankove, J. I., “Optical Processes in Semiconductors,” Dover, New York, 1971.Google Scholar
22. Wang, C., Perz, J. M., Gaspari, F., Plumb, M., and Zukotynski, S., Appl. Phys. Lett, 62, 2676 (1993).Google Scholar
23. Zheng, J.P. and Kwok, H.S., J. Opt. Soc. Am. B, vol.9, 2047 (1992).Google Scholar
24. Sze, S.M., “Physics of Semiconductor Devices,” John Wiley & Sons, New York, 1981.Google Scholar
25. Lehmann, V., Jobst, B., Muschik, T., Kux, A., and Petrora-Koch, V., Jpn. J. Appl. Phys. 32, 2095 (1993).Google Scholar
26. Cullis, A. G., Canham, L. T., Williams, G. M., Smith, P. W., and Dosser, O. D., J. Appl. Phys. 75, 493 (1994).Google Scholar