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Optical Dispersion Relations for “Diamondlike” Carbon Films

Published online by Cambridge University Press:  21 February 2011

Samuel A. Alterovitz ,
Robert M. Sieg ,
Neil S. Shoemaker  and
John J. Pouch
Samuel A. Alterovitz
Affiliation:
NASA Lewis Research Center, Cleveland, Ohio 44135
Robert M. Sieg
Affiliation:
Undergraduate Student Intern at NASA Lewis Research Center from Cleveland, State University, Dept. of Electrical Engineering, Cleveland, Ohio 44106
Neil S. Shoemaker
Affiliation:
Undergraduate Student Intern at NASA Lewis Research Center from CaseWestern Reserve University, Physics Dept., Cleveland, Ohio 44115
John J. Pouch
Affiliation:
NASA Lewis Research Center, Cleveland, Ohio 44135
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Abstract

Ellipsometric measurements on plasma deposited “diamondlike” amorphous carbon (a-C:H) films were taken in the visible, (E = 1.75 to 3.5 eV). The films were deposited on Si and their properties were varied using high temperature (up to 750 °C) anneals. The real (n) and imaginary (k) parts of the complex index of refraction N were obtained simultaneously. Following the theory of Forouhi and Bloomer (Phys. Rev. B34, 7018 (1986)), a least squares fit was used to find the dispersion relations n(E) and k(E). Reasonably good fits were obtained, showing that the theory can be used for a-C:H films. Morever, the value of the energy gap Eg obtained in this way was compared to the Eg value using conventional Tauc plots and reasonably good agreement was obtained.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 152: Symposium H – Optical Materials: Processing and Science , 1989 , 21
Copyright
Copyright © Materials Research Society 1989

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References

REFERENCES

1. Mott, N.F. and Davis, E.A., Electronic Processes in Non-Crystalline Materials, 2nd ed. (Clarendon Press, Oxford, 1979).Google Scholar
2. Forouhi, A.R. and Bloomer, I., Phys. Rev. B, 34, 7018 (1986).CrossRefGoogle Scholar
3. Robertson, J., Adv. Phys., 35, 317 (1986).CrossRefGoogle Scholar
4. Alterovitz, S.A., Warner, J.D., Liu, D.C. and Pouch, J.J., J. Electrochem. Soc., 133, 2339 (1986).CrossRefGoogle Scholar
5. Alterovitz, S.A., Pouch, J.J. and Warner, J.D., in Rapid Thermal Processing of Electronic Materials, edited by Wilson, S.R., Powell, R., and Davies, D.E., (Mater. Res. Soc. Proc. 92, Pittsburgh, PA, 1987) pp. 311–318.Google Scholar
6. Forouhi, A.R. and Bloomer, I., Phys. Rev. B, 38, 1865 (1988).CrossRefGoogle Scholar
7. Alterovitz, S.A., Bu-Abbud, G.H., Woollam, J.A., and Liu, D.C., J. Appl. Phys., 54, 1559 (1983).CrossRefGoogle Scholar
8. Bu-Abbud, G.H., Alterovitz, S.A., Bashara, N.M. and Woollam, J.A., J. Vac. Sci. Technol., A, 1, 619 (1983).CrossRefGoogle Scholar
9. Bu-Abbud, G.H., Bashara, N.M., and Woollam, J.A., Thin Solid Films, 138, 27 (1986).CrossRefGoogle Scholar
10. Snyder, P.G., Rost, M.C., Bu-Abbud, G.H., Woollam, J.A., and Alterovitz, S.A., J. Appl. Phys., 60, 3293 (1986).CrossRefGoogle Scholar
11. Alterovitz, S.A., Woollam, J.A., and Snyder, P.G., Sol. State Tech., 31 (3), 99 (1988).Google Scholar
12. Pouch, J.J., Warner, J.D., Liu, D.C. and Alterovitz, S.A., Thin Solid Films, 157, 97 (1988).CrossRefGoogle Scholar
13. J.A. Woollam Co., Lincoln, NB.Google Scholar
14. Aspnes, D.E. and Studna, A.A., Appl. Opt., 14, 220 (1975).CrossRefGoogle Scholar
15. Collins, R.W., Appl. Phys. Lett., 52, 2025 (1988).CrossRefGoogle Scholar
16. Pouch, J.J., Alterovitz, S.A., Warner, J.D., Liu, D.C., and Lanford, W.A., in Thin Films: The Relationship of Structure to Properties, edited by Aita, C. R and Sreeharsha, K.S., (Mater. Res. Soc. Proc. 47, Pittsburgh, PA, 1985) pp. 201–204.Google Scholar