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Optical Characterization of GaAsP Strained Layers Grown on (111)-Oriented GaP

Published online by Cambridge University Press:  28 February 2011

M.-E. Pistol ,
M. Gerling ,
A. Gustafsson ,
G. Paulsson ,
L. Samuelson  and
H. Titze
M.-E. Pistol
Affiliation:
Department of Solid State Physics, University of Lund, P. O. Box 118, S-221 00 Lund SWEDEN
M. Gerling
Affiliation:
Department of Solid State Physics, University of Lund, P. O. Box 118, S-221 00 Lund SWEDEN
A. Gustafsson
Affiliation:
Department of Solid State Physics, University of Lund, P. O. Box 118, S-221 00 Lund SWEDEN
G. Paulsson
Affiliation:
Department of Solid State Physics, University of Lund, P. O. Box 118, S-221 00 Lund SWEDEN
L. Samuelson
Affiliation:
Department of Solid State Physics, University of Lund, P. O. Box 118, S-221 00 Lund SWEDEN
H. Titze
Affiliation:
Department of Solid State Physics, University of Lund, P. O. Box 118, S-221 00 Lund SWEDEN
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Abstract

Strained layers of indirect GaAsP have been grown on the (111)B-oriented surface of GaP by Metal-Organic Vapour Phase Epitaxy (MOVPE). These layers have been characterized by low-temperature photoluminescence (PL), electroreflectance (ER), secondary-ion mass spectroscopy (SIMS), and wavelength resolved imaging cathodoluminescence (CL). We have been able to follow the transition energies of the lowest X conduction band edge, as well as the higher Γ band edge of the strained layers, as a function of composition up to an As-concentration of 38 %. The experimental values of the transition energies are compared with predictions made from calculations based on deformation potential theory. CL allows us to directly observe the onset of dislocation formation, i. e. the critical thickness. The appearance and properties of the dislocation network revealed by CL are very different from those of the corresponding network when the strained layers are grown on (001)-oriented surfaces.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 160 , 1989 , 673
Copyright
Copyright © Materials Research Society 1990

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