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Optical Characteristics Of Mocvd-Grown Ingan/Gan Multiple Quantum Wells Investigated By Excitation Energy Dependent Pl And Ple Spectroscopy

Published online by Cambridge University Press:  10 February 2011

Yong-Hoon Cho ,
J. J. Song ,
S. Keller ,
U. K. Mishra  and
S. P. DenBaars
Yong-Hoon Cho
Affiliation:
Center for Laser and Photonics Research and Department of Physics, Oklahoma State University, Stillwater, OK 74078
J. J. Song
Affiliation:
Center for Laser and Photonics Research and Department of Physics, Oklahoma State University, Stillwater, OK 74078
S. Keller
Affiliation:
Electrical and Computer Engineering and Materials Departments, University of California, Santa Barbara, CA 93106
U. K. Mishra
Affiliation:
Electrical and Computer Engineering and Materials Departments, University of California, Santa Barbara, CA 93106
S. P. DenBaars
Affiliation:
Electrical and Computer Engineering and Materials Departments, University of California, Santa Barbara, CA 93106
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Abstract

We have systematically studied the optical properties of InGaN/GaN multiple quantum wells (MQWs) at 10 K under different excitation conditions using photoluminescence (PL) and PL excitation (PLE) spectroscopy. The MQWs were grown on 1.8-μm-thick GaN on c-plane sapphire films by metal-organic chemical vapor deposition. Structures consist of 12 MQWs with 3-nm-thick In0.2Ga0.8N wells, 4.5-nm-thick GaN barriers, and a 100-nm-thick A10.07Ga0.93N capping layer. We found that the PL emission consists of a strong main peak at 2.80 eV and a much weaker and broader secondary peak at ˜ 2.25 eV. We observed that both the peak position and the spectral width of the main peak vary with the excitation energy. The PL peak blueshifts and narrows when the excitation energies are varied from 3.81 eV (above the bandgap of the AlGaN capping layer) to 2.99 eV (below the bandgap of the GaN barrier layers). The intensity ratio of the main peak to the secondary peak also varied with excitation energy. The PLE studies, combined with the excitation dependent PL emission studies, reveal that the two observed emission peaks originate from different layers of the MQWs. In addition, we found that the InGaN-related spontaneous emission processes are strongly affected by different carrier generation conditions with further complications associated with compositional fluctuations and possible carrier localization. The differences in the observed emission processes under varying excitation conditions can be explained by considering the transfer of carriers between the different layers of the MQW structures.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 512: Symposium F – Wide Bandgap Semiconductors for High Power, High Frequency , 1998 , 267
Copyright
Copyright © Materials Research Society 1998

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References

REFERENCES

1. Nakamura, S., Senoh, M., Iwasa, N., Nagahama, S., Yamada, T., and Mukai, T., Jpn. J. Appl. Phys. 34, L1332 (1995).Google Scholar
2. Nakamura, S., Senoh, M., Nagahama, S., Iwasa, N., Yamada, T., Matsushita, T., Sugimoto, Y., and Kiyoku, H., Appl. Phys. Lett. 69,4056 (1996).Google Scholar
3. Lirm, B. W., Chen, Q. C., Yang, J. Y., and Khan, M. A., Appl. Phys. Lett. 68, 3761 (1996).Google Scholar
4. Wu, Y. F., Keller, B. P., Keller, S., Kapolnek, D., Kozodoy, P., DenBaars, S. P., and Mishra, U. K., Appl. Phys. Lett. 69, 1438 (1996).Google Scholar
5. Yang, X. H., Schmidt, T. J., Shan, W., Song, J. J., and Goldenberg, B., Appl. Phys. Lett. 66, 1 (1995).Google Scholar
6. Chichibu, S., Azuhata, T., Sota, T., and Nakamura, S., Appl. Phys. Lett. 69,4188 (1996).Google Scholar
7. Jeon, E. S., Kozlov, V., Song, Y. -K., Vertikov, A., Kuball, M., Nurmikko, A. V., Liu, H., Chen, C., Kern, R. S., Kuo, C. P., and Craford, M. G., Appl. Phys. Lett. 69, 4194 (1996).Google Scholar
8. Narukawa, Y., Kawakami, Y., Funato, M., Fujita, Sz., Fujita, Sg., and Nakamura, S., Appl. Phys. Lett. 70, 981 (1997).Google Scholar
9. Narukawa, Y., Kawakami, Y., Fujita, Sz., Fujita, Sg., and Nakamura, S., Phys. Rev. B 55, R1938 (1997).Google Scholar
10. Keller, S., Abare, A. C., Minsky, M. S., Wu, X. H., Mack, M. P., Speck, J. S., Hu, E., Coldren, L. A., Mishra, U. K., and DenBaars, S. P., Proceedings of International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden (1997); Materials Science Forum 264 – 268, 1157 (1998).Google Scholar
11. Bidnyk, S., Schmidt, T. J., Cho, Y. H., Gainer, G. H., Song, J. J., Keller, S., Mishra, U. K., and DenBaars, S. P., Appl. Phys. Lett. 72, 1623 (1998).Google Scholar