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Optical and Structural Properties of α-Si1-xCx Films

Published online by Cambridge University Press:  15 February 2011

Zhizhong Chen ,
Kai Yang ,
Rong Zhang ,
Hongtao Shi  and
Youdou Zheng
Zhizhong Chen
Affiliation:
Department of Physics, Nanjing university, Nanjing 210093, P.R China
Kai Yang
Affiliation:
Department of Physics, Nanjing university, Nanjing 210093, P.R China
Rong Zhang
Affiliation:
Department of Physics, Nanjing university, Nanjing 210093, P.R China
Hongtao Shi
Affiliation:
Department of Physics, Nanjing university, Nanjing 210093, P.R China
Youdou Zheng
Affiliation:
Department of Physics, Nanjing university, Nanjing 210093, P.R China
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Abstract

In this paper, we reported experimental results about optical and structural properties of amorphous silicon carbide (α-Si1-xCx). The films of a-Si1-xCx) were grown by CVD on substrate of quartz glass. Optical constants (n-refractive index, a-absorption coefficient, Eg-optical energy band gap) of these films were determined by transmission spectra. The radial distribution functions (RDFs) of α- Sil−xCx) films were drawn out from the data of x-ray diffraction spectra. According to the RDFs, we imagined the statistic scene from which we could obtain the information of atomic radial distribution. The bond lengths and bond numbers of Si-Si, Si-C, and C-C could be also determined by RDFs. From the analysis of Raman spectra, we obtained the information of their vibration state density, and discerned the peaks of bond vibration, which agreed well with the results of α-Si1-xCx) RDF.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 423: Symposium E – III-Nitride, SiC, and Diamond Materials for Electronic , 1996 , 753
Copyright
Copyright © Materials Research Society 1996

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References

1. Bullot, J. and Schmidt, M. P., Phys.Stat.Sol., 143, (1987), 345.Google Scholar
2. Warren, B. E., X-ray Diffraction(Addison-Wesley, Reading, MA,1969).Google Scholar
3. Shuker, R., Gamon, R., In Proc., 2nd intern, conf. Light Scattering in Solids, Paris, 1971 (Flammarion Science, Paris, 1971).Google Scholar
4. Cardona, M., Light Scattering in Solids (1982).Google Scholar
5. Huang, S. T., X-ray Scattering in Solids (1990).Google Scholar
6. Yu, A. H., Basis of X-ray Diffraction Technology (in Chinese).Google Scholar
7. Hlug, H. P., Alexander, L. E., X-ray Diffraction Technology (Chinese version), X-ray Diffraction Procedurestor Polycrystalline and Amorphous materials, led, Wiley, 1974.Google Scholar
8. International Tables for X-ray Crystallography.Google Scholar
9. Demiryont, H., Site, J. R..and Geib, K, M,Appl.Opt,1985,24:490 Google Scholar
10. Liang, W. X., Yin, Z. Q., Thin Film Science and Technology(in Chinese), Vol.7. No., Jun., 1994(129–134).Google Scholar
11. Schulke, W., Phil.Mag.B. 43 (1981) 451.Google Scholar
12. Gorman, M., S.A.Solin, Solid State Comm. 15 (1974) 711.Google Scholar
13. Olego, Diego.and Cardona, M., Phys. Rev.B, vol.(25), No.6, (1982) 378–88Google Scholar
14. Li, G. H, Tao, M. D, Chinese Journal of Semiconductors, Vol.8, No.2., Mar,1987 (182–185).Google Scholar
15. Inoue, Y., Nakashina, S. and mitsuishi, A., Solid State Comm.,48, p. 1071(1983).Google Scholar
16. Banerjee, P. K., Pereira, J. M. T. and Mitra, S. S, J.Non.Crys.Solid, Vol.87–88, No. 1–4., p. 1–21(1982).Google Scholar