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Optical and Structural Characterization of Zinc Implanted Silica Under Various Thermal Treatments

Published online by Cambridge University Press:  03 September 2012

R. Mu
Affiliation:
Chemical Physics Laboratory, Department of Physics, Fisk University, Nashville, TN
Jinli Chen
Affiliation:
Chemical Physics Laboratory, Department of Physics, Fisk University, Nashville, TN
Z. Y. Gu
Affiliation:
Chemical Physics Laboratory, Department of Physics, Fisk University, Nashville, TN
A. Ueda
Affiliation:
Chemical Physics Laboratory, Department of Physics, Fisk University, Nashville, TN
Y. -S. Tung
Affiliation:
Chemical Physics Laboratory, Department of Physics, Fisk University, Nashville, TN
D. O. Henderson
Affiliation:
Chemical Physics Laboratory, Department of Physics, Fisk University, Nashville, TN
C. W. White
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN
Jane G. Zhu
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN
John D. Budai
Affiliation:
Chemical Physics Laboratory, Department of Physics, Fisk University, Nashville, TN
R. A. Zuhr
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN
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Abstract

Zinc ion implanted silica with controlled thermal annealing has been investigated. Low temperature optical measurements indicate the presence of Zn clusters in the as-implanted silica. Optical spectra of the annealed sample under a reducing environment suggest Zn cluster and Zn metal colloid formation. The absorption peak at ∼5.3 eV may be due to the surface plasma absorption of Zn metal colloids in silica. The oxidized samples (10 and 6 x 1016 ions/cm2) show an absorption peak at ∼4.3 and ∼4.8 eV, respectively and imply ZnO quantum dot formation. The blueshift in exciton absorption can be attributed to the quantum confinement effects.

Type
Research Article
Copyright
Copyright © Materials Research Society 1997

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