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Optical and Electrical Properties of Undoped Microcrystalline Silicon Deposited by the VHF-GD with Different Dilutions of Silane in Hydrogen

Published online by Cambridge University Press:  15 February 2011

N. Beck ,
P. Orres ,
J. Fric ,
Z. Remeš ,
A. Poruba ,
HA Stuchlíková ,
A. Fejfar ,
N. Wyrsch ,
M. Vaněček  and
J. Kočka
...Show all authors
N. Beck
Affiliation:
Institut de Microtechnique, Université de Neuchâtel, Rue A. L. Breguet 2, 2000 Neuchâtel, Switzerland
P. Orres
Affiliation:
Institut de Microtechnique, Université de Neuchâtel, Rue A. L. Breguet 2, 2000 Neuchâtel, Switzerland
J. Fric
Affiliation:
Institute of Physics, Academy of Sciences of the Czech Republic, Cukrovarnícka 10, 162 00 Praha 6, Czech Republic
Z. Remeš
Affiliation:
Institute of Physics, Academy of Sciences of the Czech Republic, Cukrovarnícka 10, 162 00 Praha 6, Czech Republic
A. Poruba
Affiliation:
Institute of Physics, Academy of Sciences of the Czech Republic, Cukrovarnícka 10, 162 00 Praha 6, Czech Republic
HA Stuchlíková
Affiliation:
Institute of Physics, Academy of Sciences of the Czech Republic, Cukrovarnícka 10, 162 00 Praha 6, Czech Republic
A. Fejfar
Affiliation:
Institute of Physics, Academy of Sciences of the Czech Republic, Cukrovarnícka 10, 162 00 Praha 6, Czech Republic
N. Wyrsch
Affiliation:
Institut de Microtechnique, Université de Neuchâtel, Rue A. L. Breguet 2, 2000 Neuchâtel, Switzerland
M. Vaněček
Affiliation:
Institute of Physics, Academy of Sciences of the Czech Republic, Cukrovarnícka 10, 162 00 Praha 6, Czech Republic
J. Kočka
Affiliation:
Institute of Physics, Academy of Sciences of the Czech Republic, Cukrovarnícka 10, 162 00 Praha 6, Czech Republic
A. Shah
Affiliation:
Institut de Microtechnique, Université de Neuchâtel, Rue A. L. Breguet 2, 2000 Neuchâtel, Switzerland
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Abstract

We show that the optical and electrical properties of microcrystalline silicon (μc-Si:H) deposited by the VHF-GD technique at 110 MHz can considerably be tuned by changing the dilution ratio of silane to hydrogen.

With increasing silane dilution we observe enhanced optical absorption for energies below 2 eV due to the transition of the material from amorphous / microcrystalline mixture to a pure microcrystalline phase. Simultaneously, the light scattering and the defect absorption increases. Strong dilution also promotes the incorporation of impurities into the material, leading to a pronounced extrinsic behaviour as seen from the decrease of the activiation energy of the electrical conductivity.

The electrical properties were investigated in the dark by the Time of Flight technique. We measured drift mobilities at room temperature which slightly increase with dilution, reaching values of 3 cm2/Vs for electrons and 1.2 cm2/Vs for holes. The ratio between electron and hole drift mobilities is found to be around 2 for all samples studied, similar to that of crystalline silicon.

Furthermore, post-transient Time of Flight measurements revealed detrimental electron deep traps in low dilution material.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 452 , 1996 , 761
Copyright
Copyright © Materials Research Society 1997

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References

REFERENCES

[1]Meier, J., Dubail, S., Flückiger, R., Fischer, D., Keppner, H. and Shah, A., Proc. of the 1st WCPVEC, Hawaii, 405 (1994).Google Scholar
[2]Beck, N., Meier, J., Fric, J., Remes, Z., Poruba, A., Flücldger, R., Pohl, J., Shah, A. and Vaněček, M., J. Non-Cryst. Sol. 198–200, 903 (1996).Google Scholar
[3]Kroll, U., Meier, J., Shah, A., Mikhailov, S. and Weber, J., J. Appl. Phys. 80, 4971 (1996).Google Scholar
[4]Meier, J., Torres, P., Platz, R., Dubail, S., Kroll, U., Anna Selvan, J.A., Pellaton Vaucher, N., Hof, C., Fischer, D., Keppner, H., Shah, A., Ufert, K.-D., Giannoulès, P., Koehler, J., to be published in Mater. Res. Soc. Symp. Proc. (San Francicso, 1996).Google Scholar
[5]Goerlitzer, M., Beck, N., Torres, P., Meier, J., Wyrsch, N. and Shah, A., J. Appl. Phys. 80, 5111 (1996).Google Scholar
[6]Torres, P., Meier, J., Flückiger, R., Kroll, U., Anna Selvan, J.A., Keppner, H., Shah, A., Littelwood, S.D., Kelly, I.E. and Giannoulès, P., Appl. Phys. Lett. 69, 1373 (1996).Google Scholar
[7]Wyrsch, N., Goerlitzer, M., Beck, N., Meier, J. and Shah, A., to be published in Mater. Res. Soc. Symp. Proc. (San Francicso, 1996).Google Scholar
[8]Green, M. A., Keevers, M. J., Progress in Photovoltaics: Research and Applications 3, 189 (1995).Google Scholar
[9]Vaněček, M., Cervinka, D., Favre, M., Curtins, H. and Shah, A., Mater. Res. Soc. Symp. Proc. 192, 639 (1990).Google Scholar
[10]Seto, J. Y. W., J. Appl. Phys. 46, 5247 (1975).Google Scholar
[11]Seynhave, G. F., Barclay, R.P., Adriaenssens, G.J., Marshall, J.M., Phys. Rev. B39, 10196 (1989).Google Scholar
[12]Kočka, J., Vaněček, M., Macháček, P., Fejfar, A., Sipek, E., Ho-The-Ha, , Pelant, I., Fric, J., Rosa, J., Remeš, Z., Poruba, A., Konagai, M. and Kusian, W., Proc. of the 1st WCPVEC, Hawaii, 437 (1994).Google Scholar