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Optical and Electrical Properties of MBE Grown Cubic GaN/GaAs Epilayers Doped by Si

Published online by Cambridge University Press:  03 September 2012

D.J. As ,
A. Richter ,
J. Busch ,
B. Schöttker ,
M. Lübbers ,
J. Mimkes ,
D. Schikora ,
K. Lischka ,
W. Kriegseis  and
W. Burkhardt
...Show all authors
D.J. As
Affiliation:
Universität Paderborn, FB-6 Physik, Warburger Strasse 100 D-33095 Paderborn, Germany, d.as@uni-paderborn.de
A. Richter
Affiliation:
Universität Paderborn, FB-6 Physik, Warburger Strasse 100 D-33095 Paderborn, Germany, d.as@uni-paderborn.de
J. Busch
Affiliation:
Universität Paderborn, FB-6 Physik, Warburger Strasse 100 D-33095 Paderborn, Germany, d.as@uni-paderborn.de
B. Schöttker
Affiliation:
Universität Paderborn, FB-6 Physik, Warburger Strasse 100 D-33095 Paderborn, Germany, d.as@uni-paderborn.de
M. Lübbers
Affiliation:
Universität Paderborn, FB-6 Physik, Warburger Strasse 100 D-33095 Paderborn, Germany, d.as@uni-paderborn.de
J. Mimkes
Affiliation:
Universität Paderborn, FB-6 Physik, Warburger Strasse 100 D-33095 Paderborn, Germany, d.as@uni-paderborn.de
D. Schikora
Affiliation:
Universität Paderborn, FB-6 Physik, Warburger Strasse 100 D-33095 Paderborn, Germany, d.as@uni-paderborn.de
K. Lischka
Affiliation:
Universität Paderborn, FB-6 Physik, Warburger Strasse 100 D-33095 Paderborn, Germany, d.as@uni-paderborn.de
W. Kriegseis
Affiliation:
Universität Giessen, I. Physik. Inst., Heinrich-Buff-Ring 16, D-35392 Giessen, Germany
W. Burkhardt
Affiliation:
Universität Giessen, I. Physik. Inst., Heinrich-Buff-Ring 16, D-35392 Giessen, Germany
B.K. Meyer
Affiliation:
Universität Giessen, I. Physik. Inst., Heinrich-Buff-Ring 16, D-35392 Giessen, Germany
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Abstract

Si-doping of cubic GaN epilayers grown by an rf plasma-assisted molecular beam epitaxy on semi-insulating GaAs (001) substrates is investigated by secondary ion mass spectroscopy (SIMS), photoluminescence (PL) and by Hall-effect measurements. SIMS measurements show a homogeneous incorporation of Si in cubic GaN epilayers up to concentrations of 5*1019 cm−3. PL shows a clear shift of the donor-acceptor emission to higher energies with increasing Si-doping. Above a Si-flux of 1*1011cm−2s−1 the near band edge lines merge to one broad band due to band gap renormalization and conduction band filling effects. The influence of the high dislocation density (≈1011cm−2) in c-GaN:Si on the electrical properties is reflected in the dependence of the electron mobility on the free carrier concentration. We find that dislocations in cubic GaN act as acceptors and are electrically active.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 595: Symposium W – GaN and Related Alloys - 1999 , 1999 , F99W3.81
Copyright
Copyright © Materials Research Society 1999

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