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Optical and Electrical Characterizations of Pzt Films With Different O/Pb Stoichiometry

Published online by Cambridge University Press:  10 February 2011

M.C. Hugon ,
B. Ea Kim ,
F. Varniere ,
B. Agius  and
E. Masetti
M.C. Hugon
Affiliation:
Université de Paris Sud, BP 127, 91403 ORSAY CEDEX FRANCE.
B. Ea Kim
Affiliation:
Université de Paris Sud, BP 127, 91403 ORSAY CEDEX FRANCE.
F. Varniere
Affiliation:
Université de Paris Sud, BP 127, 91403 ORSAY CEDEX FRANCE.
B. Agius
Affiliation:
Université de Paris Sud, BP 127, 91403 ORSAY CEDEX FRANCE.
E. Masetti
Affiliation:
ENEA, via anguillarese 301, 00060 ROMA ITALY.
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Abstract

Thin films were deposited by radio frequency (rf) magnetron sputtering on Pt/TiN/Ti/SiO2/Si substrates starting from a ceramic Pb(Zr0.4Ti0.6)O3 or metallic Pb1.1(Zr0.4Ti0.6) target. To promote the ferroelectric properties, films were successively processed by rapid thermal annealing (RTA). Before and after the RTA process, the film optical constants, in terms of refractive index and. extinction coefficient, were measured by spectroscopic ellipsometry and spectrophotometry and their values were related to the film composition determined by nuclear microanalysis with a precision better than ±2%. By adjusting the sputtering conditions, it was possible to grow different films with oxygen stoichiometry (O/Pb) in the range of 2.5-4.5. The electrical P-E characterization revealed a strong relation between the optical properties (film composition) before annealing and the hysteresis loop after annealing. This was mainly attributed to changes in the film oxidation during RTA and indicates that ferroelectric properties can be optimized adjusting the O/Pb ratio in the film.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 433: Symposium T – Ferroelectric Thin Films V , 1996 , 407
Copyright
Copyright © Materials Research Society 1996

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