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Optical and Electrical Characterizations of AlxGa1−xSb

Published online by Cambridge University Press:  25 February 2011

N. Kitamura ,
H. Yamamoto ,
K. Higuchi ,
Y. Maeda ,
A. Usami  and
T. Wada
N. Kitamura
Affiliation:
Suzuka College of Technology, Dept. of Electrical Engineering, Shiroko-cho, Suzuka 510-02, Japan
H. Yamamoto
Affiliation:
Nagoya Institute of Technology, Dept. of Electrical and Computer Science, Gokiso-cho, Showa-ku, Nagoya 466, Japan
K. Higuchi
Affiliation:
Nagoya Institute of Technology, Dept. of Electrical and Computer Science, Gokiso-cho, Showa-ku, Nagoya 466, Japan
Y. Maeda
Affiliation:
Nagoya Institute of Technology, Dept. of Electrical and Computer Science, Gokiso-cho, Showa-ku, Nagoya 466, Japan
A. Usami
Affiliation:
Nagoya Institute of Technology, Dept. of Electrical and Computer Science, Gokiso-cho, Showa-ku, Nagoya 466, Japan
T. Wada
Affiliation:
Nagoya Institute of Technology, Dept. of Electrical and Computer Science, Gokiso-cho, Showa-ku, Nagoya 466, Japan
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Abstract

The LPE grown AlxGa1−xSb was investigated by means of TEM, a carrier profiler and PL. The TEM image showed the dissociated 60° dislocations and Lomer-Cottrell sessile dislocation formed by the reaction of two dissociated 60° dislocations on different {111} planes. The EPMA measurement showed that Sb concentrations at the dislocation were lower than the stoichiometric composition. The epi-layer grown at 400°C had a relatively uniform carrier concentration of ∼7×1016cm−3. The PL spectra showed five emission peaks in 0≦×≦0.29. One shallow acceptor level and two native defect levels were introduced to interpret these PL emissions. The shallow acceptor level of Ev+∼30meV may be due to the defect of VGaGaSb. The native defects introduce two levels of EΓ1 - ∼90meV and EL1 - ∼160meV. The defect levels may be related to the complex defect of the Sb vacancy.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 94: Symposium D – Initial Stages of Epitaxial Growth , 1987 , 305
Copyright
Copyright © Materials Research Society 1987

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References

REFERENCES

1. Heinz, C. and Schmidt, W.A., J. Cryst. Growth 67, 393 (1984).Google Scholar
2. Wada, T., Kubota, K. and Ikoma, T., J. Cryst. Growth 66, 493 (1984).Google Scholar
3. Fujita, S., Hamaguchi, N., Takeda, Y. and Sasaki, A., J. de Phys. 43, C5–29 (1984).Google Scholar
4. Takeda, Y., Noda, S. and Sasaki, A., Appl. Phys. Lett. 45, 656 (1984).Google Scholar
5. Shen, J., Kitamura, N., Kakehi, M. and Wada, T., Jpn. J. Appl. Phys. 20, 1169 (1981).CrossRefGoogle Scholar
6. Cooper, C.B., Saxena, R.R. and Ludowise, M.J., Electron. Lett. 16, 892 (1980).CrossRefGoogle Scholar
7. Tsang, W.T. and Olssen, N.A., Appl. Phys. Lett. 43, 8 (1983).Google Scholar
8. Hildebrand, O., Kuebart, W. and Pilkuhm, M.H., Appl. Phys. Lett. 37, 801 (1980).CrossRefGoogle Scholar
9. Shen, J., Kitamura, N., Kakehi, M. and Wada, T., Jpn. J. Appl. Phys. 21, 1053 (1982).Google Scholar
10. Luquet, H., Gouskov, L., Perotin, M., Jean, A., Rjeb, A., Zarouri, T. and Bougnot, G., J. Appl. Phys. 60, 3582 (1986).Google Scholar
11. Sasaki, A., Ohishi, A., Sogawa, E., Mizugaki, S., Takeda, Y. and Fujita, S., Inst. Phys. Conf. Ser. No.63, (The Institute of Physics, Bristol, 1982), p. 83.Google Scholar
12. Ponce, F.A., Anderson, G.B., Haasen, P. and Brion, H.G., Defects in Semiconductors, edited by Bardeleben, H.J. von (Trans Tech Publications, Switzerland, 1986), p. 775.Google Scholar
13. Vul', A.Ya., Bir, G.L. and Yu.Shmartsev, V., Sov. Phys. Semicond. 4, 2005 (1971).Google Scholar