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Optical and Cyclotron Resonance Investigations on GaInP/GaAs Epitaxial Layers

Published online by Cambridge University Press:  21 February 2011

P. Emanuelsson ,
M. Drechsler ,
D. M. Hofmann ,
B. K. Meyer ,
M. Moser  and
F. Scholz
P. Emanuelsson
Affiliation:
Physikdepartment El 6, Technical University of Munich, D-85747 Garching, Germany
M. Drechsler
Affiliation:
Physikdepartment El 6, Technical University of Munich, D-85747 Garching, Germany
D. M. Hofmann
Affiliation:
Physikdepartment El 6, Technical University of Munich, D-85747 Garching, Germany
B. K. Meyer
Affiliation:
Physikdepartment El 6, Technical University of Munich, D-85747 Garching, Germany
M. Moser
Affiliation:
4. Physikalisches Institut, University of Stuttgart, D-70569 Stuttgart, Germany
F. Scholz
Affiliation:
4. Physikalisches Institut, University of Stuttgart, D-70569 Stuttgart, Germany
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Abstract

Ga0.5In0.5P has been investigated using optically detected cyclotron resonance and photoluminescence techniques. For the disordered alloy, the electron mass is determined to m*=0.092 m0, and for ordered material (band gap reduction ~ 50 meV) the value m*=0.088 m0 is found. The experimentally deduced values are compared with those obtained from a five-band kp calculation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 326: Symposium M – Growth, Processing, and Characterization of Semiconductor Heterostructures , 1993 , 543
Copyright
Copyright © Materials Research Society 1994

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