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Optical Absorption of Nitrogen Vacancy in Proton Irradiated AlxGa1-xN thin Films

Published online by Cambridge University Press:  21 March 2011

Qiaoying Zhou ,
M. O. Manasreh ,
M. Pophristic ,
Ian T. Ferguson  and
B. D. Weaver
Qiaoying Zhou
Affiliation:
Department of Electrical and Computer Engineering, University of New Mexico, Albuquerque, NM 87131;
M. O. Manasreh
Affiliation:
Department of Electrical and Computer Engineering, University of New Mexico, Albuquerque, NM 87131;
M. Pophristic
Affiliation:
EMCORE Corporation, 394 Elizabeth Ave, Somerset, NJ 08873;
Ian T. Ferguson
Affiliation:
EMCORE Corporation, 394 Elizabeth Ave, Somerset, NJ 08873;
B. D. Weaver
Affiliation:
Naval Research Lab, 4555 Overlook Ave, SW, Washington, DC 20375.
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Abstract

Optical absorption measurements were used to investigate deep defects in proton irradiated doped and undoped AlGaN thin films grown on sapphire substrates. Several samples were proton irradiated with energies ranging between 10 keV and 1 MeV. In certain samples, multiple-energy ion implantation was found necessary to produce a defect, which is responsible for the absorption band observed at 4.61 eV with a shoulder at around 4.10 eV in Al0.6Ga0.4N. Furnace thermal annealing of the irradiated samples show that this absorption band starts to anneal out at temperature as low as 200 oC. A combined isochronal and isothermal annealing in the temperature range of 200- 350°C shows that the activation energy (enthalpy associated with the migration process) of this defect is approximately 0.41 eV. This leads us to conclude that this absorption band is due to a N-vacancy related defect. It is observed that the peak position energy of the absorption band due to this defect is shifted depending on the Al mole fraction in good agreement with the theoretical predictions.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 693 , 2001 , I6.32.1
Copyright
Copyright © Materials Research Society 2002

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