Hostname: page-component-848d4c4894-8kt4b Total loading time: 0 Render date: 2024-07-02T07:39:22.677Z Has data issue: false hasContentIssue false

Onset of Misfit Dislocation Generation in As-Grown and Annealed Sil-XGex/Si Films

Published online by Cambridge University Press:  22 February 2011

M. P. Scott
Affiliation:
Hewlett Packard Co., Palo Alto, CA 94303-0867
S. S. Laderman
Affiliation:
Hewlett Packard Co., Palo Alto, CA 94303-0867
T. I. Kamins
Affiliation:
Hewlett Packard Co., Palo Alto, CA 94303-0867
S. J. Rosner
Affiliation:
Hewlett Packard Co., Palo Alto, CA 94303-0867
K. Nauka
Affiliation:
Hewlett Packard Co., Palo Alto, CA 94303-0867
D. B. Noble
Affiliation:
Stanford Electronics Labs, Stanford, CA 94305
J. L. Hoyt
Affiliation:
Stanford Electronics Labs, Stanford, CA 94305
C. A. King
Affiliation:
Stanford Electronics Labs, Stanford, CA 94305
C. M. Gronet
Affiliation:
Stanford Electronics Labs, Stanford, CA 94305
J. F. Gibbons
Affiliation:
Stanford Electronics Labs, Stanford, CA 94305
Get access

Abstract

X-ray topography and transmission electron microscopy were used to quantify misfit-dislocation spacings in as-grown Si1-xGex films formed by Limited Reaction Processing (LRP), which is a chemical vapor deposition technique. These analysis techniques were also used to study dislocation formation during annealing of material grown by both LRP and by molecular beam epitaxy (MBE). The thickness at which misfit dislocations first appear in as-grown material was similar for both growth techniques. The thermal stability of capped and uncapped films was also investigated after rapid thermal annealing in the range of 625 to 1000°C. Significantly fewer misfit dislocations were observed in samples containing an epitaxial silicon cap. Some differences in the number of misfit dislocation generated in CVD and MBE films were observed after annealing uncapped layers at temperatures between 625 and 825°C.

Type
Research Article
Copyright
Copyright © Materials Research Society 1989

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. King, C.A., Hoyt, J.L., Gronet, C.M., Gibbons, J.F., Scott, M.P. and Turner, J., accepted for publication in IEEE Electron Device LettersGoogle Scholar
2. King, C.A., Hoyt, J.L., Noble, D.B., Gronet, C.M., Gibbons, J.F., Scott, M.P., Kamins, T.I., and Laderman, S.S., submitted to IEEE Electron Device LettersGoogle Scholar
3. Bean, J.C., Feldman, L.C., Fiory, A.T., Nakahara, S., and Robinson, I.K., J. Vac. Sci. Technol.A, 2, 436 (1984)Google Scholar
4. Kasper, E. and Herzog, H.J., Thin Solid Films 44, 357 (1977)Google Scholar
5. Kvam, E.P., Eaglesham, D.J., Maher, D.M., Humphreys, C.J., Bean, J.C., Green, G.S., and Tanner, B.K., Materials Research Society Symposium Proceedings Volume 104, 623 (1988)Google Scholar
6. Kohama, Y., Fukuda, Y., and Seki, M., Appl. Phys. Lett. 52, 380 (1988)Google Scholar
7. Gibbons, J.F., Gronet, C.M., and Williams, K.E., Appl. Phys. Lett. 47, 721 (1985)Google Scholar
8. Hagen, W. and Strunk, H., Appl. Phys. 17, 85 (1978)Google Scholar
9. Matthews, J.W. and Blakeslee, A.E., J. Cryst.Growth 27, 181 (1974)Google Scholar