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One and Two-Dimensional Pattern Formation on Ion Sputtered Silicon

Published online by Cambridge University Press:  01 February 2011

Ari-David Brown ,
H. Bola George ,
Michael J. Aziz  and
Jonah Erlebacher
Ari-David Brown
Affiliation:
Department of Physics and Astronomy, Johns Hopkins University, Baltimore, MD 21218, U.S.A. Department of Materials Science and Engineering, Johns Hopkins University, Baltimore, MD 21218, U.S.A.
H. Bola George
Affiliation:
Division of Engineering and Applied Sciences, Harvard University, Cambridge, MA 02138, U.S.A.
Michael J. Aziz
Affiliation:
Division of Engineering and Applied Sciences, Harvard University, Cambridge, MA 02138, U.S.A.
Jonah Erlebacher
Affiliation:
Department of Materials Science and Engineering, Johns Hopkins University, Baltimore, MD 21218, U.S.A.
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Abstract

The evolution of surface morphology during ion beam erosion of Si(111) at glancing ion incidence (60° from normal, 500 eV Ar+, 0.75 mA/cm2 collimated beam current) was studied over a temperature range of 500–730° Celsius. Keeping ion flux, incident angle, and energy fixed, it was found that one-dimensional sputter ripples with wavevector oriented perpendicular to the projected ion beam direction form during sputtering at the lower end of the temperature range. For temperatures above approximately 690° Celsius, growth modes both parallel and perpendicular to the projected ion beam direction contribute to the surface morphological evolution. This effect leads to the formation of bumps (“dots”) with nearly rectangular symmetry.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 792: Symposium R – Radiation Effects and Ion Beam Processing of Materials , 2003 , R7.8
Copyright
Copyright © Materials Research Society 2004

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References

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