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On the Pattern Dependency and Substrate Effects During Chemical-Mechanical Planarization for Ulsi Manufacturing

Published online by Cambridge University Press:  10 February 2011

Wei-Tsu Tseng ,
James Jong-Lin Niu  and
Chi-Fa Lin
Wei-Tsu Tseng
Affiliation:
Deparment of Materials Science and Engineering, National Cheng-Kung University, 1 Ta- Hsueh Road, Tainan 701 TAIWAN, wttsen@mail.ncku.edu.tw
James Jong-Lin Niu
Affiliation:
Deparment of Materials Science and Engineering, National Cheng-Kung University, 1 Ta- Hsueh Road, Tainan 701 TAIWAN, wttsen@mail.ncku.edu.tw
Chi-Fa Lin
Affiliation:
Winbond Electronics Corp., Hsinchu 301, Taiwan
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Abstract

The change of surface profile during chemical-mechanical planarization (CMP) is monitored continuously in this study. The influences from pattemn dependency and substrate effects are discussed. Step height reduction rate is a function of pattern density and down force. The rate decreases with time until planarization is achieved. As the polish approaches the patterns underneath, the interaction between substrate effects and pattern dependency results in the resurgence of step height. The implication of this newly found phenomenon is discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 566: Symposium P – Chemical-Mechanical Poilshing-Fundamentals and Challenges , 1999 , 217
Copyright
Copyright © Materials Research Society 2000

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References

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