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On the Forward Conduction Mechanisms in SiC P-N Junctions

Published online by Cambridge University Press:  21 February 2011

Lourdes Pelaz ,
J. Vicente ,
M. Jaraiz ,
L. Bailon  and
J. Barbolla
Lourdes Pelaz
Affiliation:
Universidad de Valladolid, Departamento de Electricidad y Electrónica, Facultad de Ciencias, E-47011 Valladolid, Spain
J. Vicente
Affiliation:
Universidad de Valladolid, Departamento de Electricidad y Electrónica, Facultad de Ciencias, E-47011 Valladolid, Spain
M. Jaraiz
Affiliation:
Universidad de Valladolid, Departamento de Electricidad y Electrónica, Facultad de Ciencias, E-47011 Valladolid, Spain
L. Bailon
Affiliation:
Universidad de Valladolid, Departamento de Electricidad y Electrónica, Facultad de Ciencias, E-47011 Valladolid, Spain
J. Barbolla
Affiliation:
Universidad de Valladolid, Departamento de Electricidad y Electrónica, Facultad de Ciencias, E-47011 Valladolid, Spain
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ABSTRACT:In SiC junctions, it is usual to find the ideality factor n=2 (or slightly higher) in 6H-SiC and n>2 and temperature dependent for 3C-SiC. However, the recombination current yields an ideality factor no higher than 2. This value can be slightly increased by considering the Poole-Frenkel effect (PFE), so that the 6H-SiC junction characteristics can be properly fitted. On the other hand, 3C-SiC junction characteristics, which are quite different from the ideal ones, cannot be satisfactorily explained on the basis of this model and the multitunnel capture-emission mechanism is proposed as the responsible for this behavior.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 339: Symposium D – Diamond, Silicon Carbide and Nitride Wide Bandgap Semiconductors , 1994 , 151
Copyright
Copyright © Materials Research Society 1994

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References

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