Hostname: page-component-848d4c4894-4hhp2 Total loading time: 0 Render date: 2024-05-17T03:38:36.414Z Has data issue: false hasContentIssue false
  • English
  • Français

On The Electronic Contribution to Elastic Constants of Ultrathin Films of P-Type Si

Published online by Cambridge University Press:  26 February 2011

Kamaxhya P Ghatak  and
Badal De
Kamaxhya P Ghatak
Affiliation:
DEPARTMENT OF ELECTRONICS AND TELECOMMNUNICATION ENGINEERING, UNIVERSITY OF JADAVPUR, CALCUTTA-700032, INDIA
Badal De
Affiliation:
DEPARTMENT OF ELECTRICAL ENGINEERING, JOHN BROWN E AND CINC., 333 LUDLOW STREET, P.O. BOX 1422, CONNECTICUT-0690, USA
Get access

Abstract

In this paper we have formulated the electronic contribution to the elastic constants in ultrathin films of p-Si by considering the influences of heavy, light and split-off holes respectively. We have suggested an experimental method of determining the same in degenerate materials having arbitrary dispersion laws. The elastic constants increase with increasing hole concentration in an oscillatory way and decrease with increasing film thickness. The theoretical formulation is in agreement with the suggested experimental method of determining second and third order elastic constants.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 226: Symposium H – Mechanical Behavior of Materials and Structures in Microelectronics , 1991 , 191
Copyright
Copyright © Materials Research Society 1991

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Tsuchiya, M., Gaines, J. M., Yan, R.H., Simes, R.J., Holtz, P.O., Coldren, I.A., Petroff, P.M., Phys. Rev. Letts. 62, 466 (1989).Google Scholar
2. Linch, M.T., Festkorperprobleme 62, 227 (1983)Google Scholar
3. Mitra, B., Ghatak, K.P., Phys. Letts. 141A, 81 (1989) and the references cited therein,Google Scholar
4. Keyes, R.W., Solid State Phys. 20, 37 (1967).Google Scholar
5. Ghatak, K.P., Phys. Stat. Sol. (b) 154, K29 (1989).Google Scholar
6. Averkiev, N.S., Yu, V. Ibisavskiy, Sternin, V.M., Solid State Commun. 52, 17 (1984).Google Scholar
7. Tsidilkovski, T. Y., Band Structure of Semiconductors (Pergamon Press, London 1982).Google Scholar
8. Kakanov, I.A. and Aronov, A.P., J. Exp. Theor. Phys. 140, 192 (1991).Google Scholar