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OMVPE Growth of ZnSe Utilizing Zinc Amides as Source Compounds: Relevance to the Production of p-Type Material

Published online by Cambridge University Press:  25 February 2011

William S. Rees Jr ,
David M. Green ,
Timothy J. Anderson  and
Eric Bretschneider
William S. Rees Jr
Affiliation:
Department of Chemistry and Materials Research and Technology Center, The Florida State University, Tallahassee, FL, 323006–3006 U.S.A.
David M. Green
Affiliation:
Department of Chemistry and Materials Research and Technology Center, The Florida State University, Tallahassee, FL, 323006–3006 U.S.A.
Timothy J. Anderson
Affiliation:
Department of Chemical Engineering and MICROFABRITECH, University of Florida, Gainesville, FL, 323006–3006 U.S.A
Eric Bretschneider
Affiliation:
Department of Chemical Engineering and MICROFABRITECH, University of Florida, Gainesville, FL, 323006–3006 U.S.A
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Abstract

Growth of ZnSe on GaAs from H2S9 and Zn[N(TMS)2]2 precursors has been demonstrated. When Et2Zn is used as the zinc precursor a higher quality deposit is obtained. Results of experiments employing Et2Zn as the main zinc source with Zn[N(TMS)2]2 introduced at a dopant level indicate nitrogen has been incorporated. Final thin films were characterized by PL, XRD, SIMS, and Raman.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 242: Symposium G – Wide Band-Gap Semiconductors , 1992 , 281
Copyright
Copyright © Materials Research Society 1992

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References

REFERENCES AND FOOTNOTES

1. Reported at Device Research Conference, Boulder, CO., 17–19 June 1991.Google Scholar
2 Yasuda, T.; Mitsuishi, I.; Kukimoto, H. Appl. Phys. Lett, 1988, 52, 57.Google Scholar
3. Yoshikawa, A.; Muto, S.; Yamaga, S.; Kasai, S. Japan. J. Appl. Phys., 1988, 27, L260.Google Scholar
4. Yahata, A.; Mitsuhashi, H.; Hirahara, K.; Beppu, T. Japan. J. Appl. Phys., 1990, 29, L4.Google Scholar
5. Stutius, W. J. Crystal Growth., 1982, 59, 1.Google Scholar
6. a. Ohki, A.; Shibita, N.; Ando, K.; Katsui, A. J. Crystal Growth, 1988, 93, 692.CrossRefGoogle Scholar
b Ohki, A.; Shibata, N.; Zambutsu, S. Japan. J. Appl. Phys., 1988, 27, L909.Google Scholar
7. a. Yoshikawa, A.; Muto, S.; Yamaga, S.; Kasai, H. J. Crystal Growth, 1988, 86, 279.Google Scholar
b Yoshikawa, A.; Muto, S.; Yamaga, S.; Kasai, H. Japan. J. Appl. Phys., 1988 27, 992.Google Scholar
8. Suemune, I.; Yamada, K.; Masato, H.; Kando, T.; Kan, Y.; Yamanishi, M. Japan. J. Appl. Phys., 1988. 27, L2195.Google Scholar
9. a. Taike, A.; Migita, M.; Yamamoto, H. Appl. Phys. Lett., 1990, 56, 1989.Google Scholar
b. Migita, M.; Taike, A.; Yamamoto, H. J. Appl. Phys., 1990, 68, 880.Google Scholar
10. Rees, W. S. Jr; Green, D. M.; Anderson, T. J.; Bretschneider, E.; Pathangey, B.; Kim, J., accepted in J. Electronic Materials, 1992.Google Scholar
11. See, for example, Huheey, J. E. Inorganic Chemistry, second edition, Harper and Row: New York, 1978.Google Scholar
12. Rees, W. S. Jr, unpublished results.Google Scholar
13. Rees, W. S Jr; Green, D. M.; Hesse, W. “Synthesis and X-ray Diffraction Crystal Structure of Zn{N[(C(CH3)3)(Si(CH3)3)]}2. The First Solid State Characterization of a Homoleptic Zinc Amide”, submitted for publication.Google Scholar