Hostname: page-component-77c89778f8-vpsfw Total loading time: 0 Render date: 2024-07-20T05:11:45.799Z Has data issue: false hasContentIssue false
  • English
  • Français

Ohmic Contact Formation Mechanism in the Ge/Pd/N-GaAs System

Published online by Cambridge University Press:  25 February 2011

E.D. Marshall ,
S.S. Lau ,
C.J. Palmstrøm ,
T. Sands ,
C.L. Schwartz ,
S.A. Schwarz ,
J.P. Harbison  and
L.T. Florez
E.D. Marshall
Affiliation:
University of California at San Diego, Department of Electrical and Computer Engineering, R-007, La Jolla, CA 92093
S.S. Lau
Affiliation:
University of California at San Diego, Department of Electrical and Computer Engineering, R-007, La Jolla, CA 92093
C.J. Palmstrøm
Affiliation:
Bellcore, 331 Newman Springs Road, Red Bank, NJ 07701-7040
T. Sands
Affiliation:
Bellcore, 331 Newman Springs Road, Red Bank, NJ 07701-7040
C.L. Schwartz
Affiliation:
Bellcore, 331 Newman Springs Road, Red Bank, NJ 07701-7040
S.A. Schwarz
Affiliation:
Bellcore, 331 Newman Springs Road, Red Bank, NJ 07701-7040
J.P. Harbison
Affiliation:
Bellcore, 331 Newman Springs Road, Red Bank, NJ 07701-7040
L.T. Florez
Affiliation:
Bellcore, 331 Newman Springs Road, Red Bank, NJ 07701-7040
Get access

Abstract

Annealed Ge/Pd/n-GaAs samples utilizing substrates with superlattice marker layers have been analyzed using high resolution backside secondary ion mass spectrometry and cross-sectional transmission electron microscopy. Interfacial compositional and microstructural changes have been correlated with changes in contact resistivity. The onset of good ohmic behavior is correlated with the decomposition of an intermediate epitaxial Pd4(GaAs,Ge2) phase and solid-phase regrowth of Ge-incorporated GaAs followed by growth of a thin Ge epitaxial layer.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 148: Symposium D – Chemistry and Defects in Semiconductor Heterostructures , 1989 , 163
Copyright
Copyright © Materials Research Society 1989

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] Braslau, N., J. Vac Sci. Technol. 19 (1981).CrossRefGoogle Scholar
[2] Palmstrøm, C.J. and Morgan, D.V., in Gallium Arsenide, edited by Howes, M.J. and Morgan, D.V. (John Wiley and Sons, 1985), p. 195.Google Scholar
[3] Shih, Y.C., Murakami, M., Wilkie, E.L., and Callegari, A.C., J. Appl. Phys. 62, 582 (1987).Google Scholar
[4] Marshall, E.D., Zhang, B., Wang, L.C., Jiao, P.F., Chen, W.X., Sawada, T., Kavanagh, K.L., and Kuech, T.F., J. Appl. Phys. 62, 942 (1987).Google Scholar
[5] Marshall, E.D., Yu, L.S., Lau, S.S., Sands, T., and Kuech, T.F., Appl. Phys. Lett. 54, 721 (1989).Google Scholar
[6] Wang, L.C., Zhang, B., Fang, F., Marshall, E.D., Lau, S.S., Sands, T., and Kuech, T.F., J. Mater. Res. 3, 922 (1988).CrossRefGoogle Scholar
[7] Sands, T., Marshall, E.D., and Wang, L.C., J. Mater. Res. 3, 915 (1988).Google Scholar
[8] Palmstrom, C.J., Schwarz, S.A., Marshall, E.D., Yablonovitch, E., Harbison, J.P., Schwartz, C.L., Florez, L., Gmitter, T.J., Wang, L.C., and Lau, S.S., Mat. Res. Symp. Proc. 126, 283 (1988).CrossRefGoogle Scholar