Hostname: page-component-848d4c4894-8kt4b Total loading time: 0 Render date: 2024-06-22T12:40:40.114Z Has data issue: false hasContentIssue false
  • English
  • Français

Observations of Domain Structure at Initial Growth Stage of PbTiO3 Thin Films Grown by Mocvd

Published online by Cambridge University Press:  10 February 2011

H. Fujisawa ,
M. Shimizu ,
H. Niu ,
K. Honda  and
S Ohtani
H. Fujisawa
Affiliation:
fujisawa@elnics.eng.himeji-tech.ac.jp
M. Shimizu
Affiliation:
Department of Electronics, Faculty of Engineering, Himeji Institute of Technology 2167 Shosha, Himeji, Hyogo 671–2201, Japan.
H. Niu
Affiliation:
Department of Electronics, Faculty of Engineering, Himeji Institute of Technology 2167 Shosha, Himeji, Hyogo 671–2201, Japan.
K. Honda
Affiliation:
Fujitsu Laboratory Limited 10–1 Morinosato-Wakamiya, Atsugi, Kanagawa 243–0197, Japan.
S Ohtani
Affiliation:
Fujitsu Laboratory Limited 10–1 Morinosato-Wakamiya, Atsugi, Kanagawa 243–0197, Japan.
Get access

Abstract

Domain structure and growth mechanism of PbTiO3 thin films were investigated using a transmission electron microscopy(TEM) from the viewpoint of size effects. At initial growth stage of (111)-oriented PbTiO3 films prepared by metalorganic chemical vapor deposition(MOCVD), triangle-shaped islands were grown on Pt(111)/SiO2/Si before becoming a continuous film. Triangular islands grew gradually in a lateral dimension. This means that PbTiO3 films grew two-dimensionally at initial growth stage. In cross-sectional TEM photomicrographs, (101)-twin boundaries (90° domain walls) and inclination of {110} or {101}-plane were observed in PbTiO3 islands. This result indicates that such small PbTiO3 islands have a tetragonal structure and could have spontaneous polarization. The minimum island which had 90° domain walls was 10nm high and 18nm wide.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 596: Symposium Y – Ferroelectric Thin Films VIII , 1999 , 321
Copyright
Copyright © Materials Research Society 2000

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Uchino, K., Sadanaga, E. and Hirose, T., J.Am.Ceram.Soc., 72, 1555(1989).Google Scholar
2. Zhong, W. L., Jiang, B., Zhang, P. L., Ma, J. M., Cheng, H. M., Yang, Z. H. and Li, L. X., J.Phys.: Condens.Matter, 5, 2619(1993).Google Scholar
3. McCauley, D., Newnham, Robert E. and Randall, Clive A., J.Am.Ceram.Soc., 81 979(1998).Google Scholar
4. Ishikawa, K., Nomura, T., Okada, N. and Takada, K., Jpn.J.Appl.Phys., 35, 5196(1996).Google Scholar
5. Uemoto, Y., Oyo-Buturi, , 67,1256(1998).[in Japanese]Google Scholar
6. Fujisawa, H., Shimizu, M., Horiuchi, T., Shiosaki, T. and Matsushige, K., Jpn.J.Appl.Phys., 35, 4913(1996).Google Scholar
7. Frey, M. H. and Payne, D. A., Appl.Phys.Lett., 63, 2753(1993).Google Scholar
8. Zhou, C. and Newns, D. M., J.Appl.Phys., 82, 3081(1997).Google Scholar
9. Shimizu, M., Sugiyama, M., Fujisawa, H., Hamano, T., Shiosaki, T. and Matsushige, K., Crys, J..Growth, 145, 226(1994).Google Scholar
10. Speck, J. S., Daykin, A. C., Seifert, A., Romanov, A. E. and Pompe, W., J.Appl.Phys., 78, 1696(1995).Google Scholar