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Observations of Damage and Transport of Hydrogen in Ion Bombarded Polycrystalline Silicon

Published online by Cambridge University Press:  21 February 2011

D. J. Sharp ,
J. K. G. Panitz  and
C. H. Seager
D. J. Sharp
Affiliation:
Sandia National Laboratories, P. O. Box 5800, Albuquerque, NM 87185, USA
J. K. G. Panitz
Affiliation:
Sandia National Laboratories, P. O. Box 5800, Albuquerque, NM 87185, USA
C. H. Seager
Affiliation:
Sandia National Laboratories, P. O. Box 5800, Albuquerque, NM 87185, USA
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Abstract

A combination of chemical etching and sheet resistivity measurements showed that intense (1.4 mA/cm2 ) low energy (1400 eV) ion beam hydrogenation of polycrystalline silicon having a columnar structure can produce electrical defect passivation to depths in the order of 100 μm. Transmission electron micrographs disclose surface and near-surface features resulting from the ion beam bombardment which suggest that one of the hydrogen transport mechanisms may be defect induced.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 33: Symposium D – Comparison of Thin Film Transistor and SOI Technologies , 1984 , 179
Copyright
Copyright © Materials Research Society 1984

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References

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