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Observation of Grain Growth in Cu Films by In-Situ EBSD Analysis

Published online by Cambridge University Press:  01 February 2011

D.P. Field ,
M.M. Nowell  and
O.V. Kononenko
D.P. Field
Affiliation:
Mech. and Matls. Eng, Washington State Univ, Pullman, WA 99164-2920USA
M.M. Nowell
Affiliation:
TexSEM Laboratories, Draper, UT 84020USA
O.V. Kononenko
Affiliation:
Institute of Microelectronics, Russian Academy of Science, Chernogolovka, RUSSIA
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Abstract

Recrystallization, grain growth and crystallographic texture evolution in Cu films is an area of importance for IC interconnect fabrication as the film characteristics influence the resulting line microstructure. This study examines Cu films deposited by partially ionized beam deposition onto a sublayer of tantalum nitride and additionally onto alpha- C:H. The films were annealed in-situ in the SEM chamber and intermittent orientation imaging was used to characterize the grain growth and crystallographic texture evolution in the films. Both initial and final textures are weak in each of the films analyzed, but are a function of sublayer material and thickness. Grain size in the Cu films is significantly smaller for the tantalum nitride sublayer than for the á-C:H sublayer.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 766: Symposium E – Materials, Technology and Reliability for Advanced Interconnects and Low-k Dielectrics - 2003 , 2003 , E4.5
Copyright
Copyright © Materials Research Society 2003

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References

1. Kononenko, O.V., Ivanov, E.D., Matveev, V.N. and Khodos, I.I., Scr. Met. Mater, 33, p.1981 (1995).Google Scholar
2. Field, D.P., Kononenko, O.V., and Matveev, V.N., J. Electr. Matls. 31, 40–44 (2002).Google Scholar
3. Zielinski, E.M., Vinci, R.P. and Bravman, J.C., J. Appl. Phys. 76, 4516 (1994).Google Scholar
4. Thompson, C.V., Scripta metall, 28, 167 (1993).Google Scholar
5. Matthies, S., and Vinel, G.W., Materials Science Forum, 157, 1641 (1994)Google Scholar
6. Brandon, D.G., Acta metall, 14, 1479 (1966).Google Scholar