Hostname: page-component-8448b6f56d-wq2xx Total loading time: 0 Render date: 2024-04-19T20:55:09.245Z Has data issue: false hasContentIssue false
  • English
  • Français

Observation of Band Gap Energy Fluctuation of Microcrystalline InGaN:Zn

Published online by Cambridge University Press:  17 March 2011

Hisashi Kanie ,
Kosei Sugimoto  and
Hiroaki Okado
Hisashi Kanie
Affiliation:
Dept of Applied Electronics, Science Univ. Tokyo, Noda, Chiba, 278-8510, JAPAN
Kosei Sugimoto
Affiliation:
Dept of Applied Electronics, Science Univ. Tokyo, Noda, Chiba, 278-8510, JAPAN
Hiroaki Okado
Affiliation:
Dept of Applied Electronics, Science Univ. Tokyo, Noda, Chiba, 278-8510, JAPAN
Get access

Abstract

This paper describes a comparison of the optical properties of InGaN:Zn with that of GaN:Zn and InGaN by measuring photoluminescence excitation (PLE) spectra at 77 K. It is well known that MOCVD grown InGaN films tend to have a fluctuation in In concentration which results in a fluctuation of the band gap energy. The PL mechanism in InGaN films has been assigned to the annihilation of an exciton at the potential minima caused by the fluctuated band gap potential. We grew InGaN(:Zn) and GaN:Zn microcrystals emitting intense blue luminescence by a reaction of GaN and In2S3 with NH3 in the range of 850 to 900 °C. The samples grown at various temperatures show two PLE peaks: one weak peak is located around 3.47 eV, which we attribute to the band gap energy, and the other peak around 3.15 eV, which we attributed to the In localized state level. We had proposed an atomic structure of the localized state based on an isoelectronic trap theory. However, it is necessary to estimate the order of potential fluctuation of the grown InGaN microcrystal is small in order to assure the isoelectronic trap theory. PLE spectra of InGaN:Zn were measured and compared with that of GaN:Zn to estimate the degree of energy gap fluctuation. As the shape of a PLE peak of InGaN:Zn at around 3.47 eV was comparable to that of GaN:Zn, we concluded that the isoelectronic trap model holds for the grown InGaN microcrystals.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 639: Symposium G – GaN and Related Alloys-2000 , 2000 , G6.18
Copyright
Copyright © Materials Research Society 2001

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Kanie, H., Kawano, T., and Koami, H., Proc. 2nd Intern. Symp. on Blue Laser and Light Emitting Diodes, Chiba, 552(1998).Google Scholar
2. Nakamura, S. and Fasol, S., The Blue Laser Diode, Springer-Verlag, Heidelburg, 1997.Google Scholar
3. Nakamura, S., Senoh, M., Nagahama, S., Iwasa, N., Yamada, T., Matsushita, T., Kiyoku, H., Sugimoto, Y., Kozaki, T., Umemoto, H., Sano, M. and Chocho, K.: Jpn. J. Appl. Phys. 36, L1568 (1997)Google Scholar
4. Chichibu, S., Azuhata, T., Sota, T. and Nakamura, S.: Appl. Phys. Lett. 70, 2822(1997).Google Scholar
5. Narukawa, Y., Kawakami, Y., Fujita, Sz. and Fujita, Sg.: Phys. Rev. B 55, 1938(1997).Google Scholar
6. Narukawa, Y., Kawakami, Y., Funato, M., Fujita, Sz. and Fujita, Sg.: Appl. Phys. Lett. 70, 981(1997).Google Scholar
7. Kollmer, H., Im, Jin Seo, Heppel, S., Off, J., Scholz, F. and Hangleiter, A.: Appl. Phys. Lett. 74, 82(1999).Google Scholar
8. Kanie, H., Koami, H., Kawano, T., and Totsuka, T., Mat. Res. Soc. Symp. Proc. 482, 731(1998).Google Scholar
9. Kaneko, Y. and Koda, T.: J. Crystal Growth. 86, 72 (1988).Google Scholar
10. Henderson, B. and McDonagh, C.M.: J. Phys. C. 13, 5811 (1980).Google Scholar
11. Fischer, P., Christen, J., and Nakamura, S.: Jpn. J. Appl. Phys. 39, L129(2000).Google Scholar