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Numerical Study of Scaling Issues in Graphene Nanoribbon Transistors

Published online by Cambridge University Press:  30 August 2011

Man-Tieh Chen  and
Yuh-Renn Wu
Man-Tieh Chen
Affiliation:
Graduate Institute of Photonics and Optoelectronics and Department of Electrical Engineering, National Taiwan University, Taipei, Taiwan, 10617.
Yuh-Renn Wu*
Affiliation:
Graduate Institute of Photonics and Optoelectronics and Department of Electrical Engineering, National Taiwan University, Taipei, Taiwan, 10617.
*
*Corresponding author: yrwu@cc.ee.ntu.edu.tw
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Abstract

This paper addresses scaling issues in graphene nanoribbon transistors (GNRFETs) by using a two-dimensional (2-D) Poisson and drift-diffusion solver with finite element method (FEM). GNRFETs with the back gate control and the channel width down to less than 5nm have been reported to have Ion=Ioff ratio up to 106. Our simulations show an agreement with the published experimental work and show a potential to reach unit current gain cut-off frequency, fT , up to more than 1THz with a satisfying Ion=Ioff ratio at the same time. This makes GNRFETs attractive for high speed logic.

Keywords

simulationcarbonizationnanostructure
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1344: Symposium Y – Functional Two-Dimensional Layered Materials—From Graphene to Topological Insulators , 2011 , mrss11-1344-y03-23
Copyright
Copyright © Materials Research Society 2011

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References

REFERENCES

[1] Novoselov, K. S., Geim, A. K., Morozov, S. V., Jiang, D., Zhang, Y., Dubonos, S. V., Grigorieva, I. V., and Firsov, A. A. Science 306(5696), 666–669 (2004).Google Scholar
[2] Geim, A. K. and Novoselov, K. S. Nat Mater 6(3), 183–191 March (2007).Google Scholar
[3] Castro Neto, A. H., Guinea, F., Peres, N. M. R., Novoselov, K. S., and Geim, A. K. Rev. Mod. Phys. 81(1), 109–162 Jan (2009).Google Scholar
[4] Avouris, P., Lin, Y., Xia, F., Farmer, D., Mueller, T., Dimitrakopoulos, C., and Jenkins, K. In 2010 IEEE International Electron Devices Meeting, (2010).Google Scholar
[5] Castro, E. V., Novoselov, K. S., Morozov, S. V., Peres, N. M. R., dos Santos, J. M. B. L., Nilsson, J., Guinea, F., Geim, A. K., and Neto, A. H. C. Phys. Rev. Lett. 99(21), 216802 Nov (2007).Google Scholar
[6] Gava, P., Lazzeri, M., Saitta, A. M., and Mauri, F. Phys. Rev. B 79(16), 165431 Apr (2009).Google Scholar
[7] Zhou, S., Siegel, D., Fedorov, A., Gabaly, F., Schmid, A., Neto, A. C., Lee, D.-H., and Lanzara, A. Nat Mater 7(4), 259–260 April (2008).Google Scholar
[8] Kim, S., Ihm, J., Choi, H. J., and Son, Y.-W. Phys. Rev. Lett. 100(17), 176802 Apr (2008).Google Scholar
[9] Yavari, F., Kritzinger, C., Gaire, C., Song, L., Gulapalli, H., Borca-Tasciuc, T., Ajayan, P. M., and Koratkar, N. Small 6(22), 2535–2538 (2010).Google Scholar
[10] Pereira, V. M., Castro Neto, A. H., and Peres, N. M. R. Phys. Rev. B 80(4), 045401 Jul (2009).Google Scholar
[11] Balog, R., Jorgensen, B., Nilsson, L., Andersen, M., Rienks, E., Bianchi, M., Fanetti, M., Laegsgaard, E., Baraldi, A., Lizzit, S., Sljivancanin, Z., Besenbacher, F., Hammer, B., Pedersen, T. G., Hofmann, P., and Hornekaer, L. Nat Mater 9(4), 315–319 April (2010).Google Scholar
[12] Son, Y.-W., Cohen, M. L., and Louie, S. G. Phys. Rev. Lett. 97(21), 216803 Nov (2006).Google Scholar
[13] Wang, X. R., Ouyang, Y. J., Li, X. L., Wang, H. L., Guo, J., and Dai, H. J. Physical Review Letters 100(20), 206803 May (2008).Google Scholar
[14] Lam, K.-T., Seah, D., Chin, S.-K., Bala Kumar, S., Samudra, G., Yeo, Y.-C., and Liang, G. Electron Device Letters, IEEE 31(6), 555 –557 (2010).Google Scholar
[15] Zhang, Q., Fang, T., Xing, H., Seabaugh, A., and Jena, D. Electron Device Letters, IEEE 29(12), 1344 –1346 (2008).Google Scholar
[16] Shishir, R. S. and Ferry, D. K. Journal of Physics-condensed Matter 21(34), 344201 August (2009).Google Scholar
[17] Chauhan, J. and Guo, J. Applied Physics Letters 95(2), 023120 July (2009).Google Scholar
[18] Bresciani, M., Palestri, P., Esseni, D., and Selmi, L. Solid-State Electronics 54(9), 1015 – 1021 (2010).Google Scholar
[19] Fang, T., Konar, A., Xing, H., and Jena, D. Phys. Rev. B 78(20), 205403 Nov (2008).Google Scholar
[20] Zeng, L., Liu, X., Du, G., Kang, J., and Han, R. In International Conference on Simulation of Semiconductor Processes and Devices, (2009).Google Scholar
[21] Wu, Y.-R., Singh, M., and Singh, J. IEEE Trans. Electron Devices 53, 588–593 (2006).Google Scholar
[22] Wu, Y.-R. and Singh, J. Journal of Applied Physics 101(11), 113712 (2007).Google Scholar