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Numerical Simulation of Fz Single Crystal Growth Process with Radio-Frequency Induction Heating

Published online by Cambridge University Press:  21 February 2011

Y. Masuda ,
T. Tsukada  and
M. Hozawa
Y. Masuda
Affiliation:
Materials Engineering Division, Tohoku National Industrial Research Institute, 4-2-1, Nigatake, Miyagino-ku, Sendai, 983, Japan
T. Tsukada
Affiliation:
Laboratory of Separation and Purification, Laboratory of Separation and Purification, Tohoku Univ., 2-2-1, Katahira, Aoba-ku, Sendai, 980, Japan
M. Hozawa
Affiliation:
Laboratory of Separation and Purification, Laboratory of Separation and Purification, Tohoku Univ., 2-2-1, Katahira, Aoba-ku, Sendai, 980, Japan
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Abstract

Analyses of a floating zone (FZ) crystal growth system with a radio frequency (RF) induction heating are carried out. The electromagnetic and temperature fields, and surface interfaces are solved for numerically. Finite element methods are used for the calculation of the temperature fields and interfaces and the hybrid finite element and boundary element methods are used for the calculation of the electromagnetic field. The calculation domain is divided into eleven regions, each of which, except for the RF coil region, require a coordinate transformation. In the present study, the silicon FZ growth system ,where the diameter of both feed-rod and single crystal were set to be 1cm was computed. The Lorentz force is found to play an important role in determining the melt free surface shape and the molten zone length. The effect of the current density, frequency of RF coil and crystal growth rate are investigated.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 398: Symposium C – Thermodynamics and Kinetics of Phase Transformations , 1995 , 157
Copyright
Copyright © Materials Research Society 1998

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References

REFERENCES

1 Duranceau, J.L. and Brown, R.A., J. Crystal Growth 75, 367 (1986).Google Scholar
2 Lan, C.W. and Kou, S., J. Crystal Growth 108, 351 (1991).Google Scholar
3 Lan, C.W. and Kou, S., J. Crystal Growth 133, 309 (1993).Google Scholar
4 Lan, C.W. and Kou, S., J. Crystal Growth 132, 578 (1993).Google Scholar
5 Mühlbauer, A., Muiznieks, A., Virbulis, J., Lüdge, A. and Riemann, H., J. Crystal Growth 64, 529 (1983).Google Scholar
6 Riahi, D.N. and Walker, J.S., J. Crystal Growth 94, 635 (1989).Google Scholar
7 Masuda, Y., Tsukada, T., Hozawa, M., Imaishi, N. and Ohnishi, N., Int.J. Heat Mass Transfer, to be published.Google Scholar
8 Miyoshi, T., Sumiya, M. and Omori, H., IEEE Transactions on magnetics, MAG-23, 1827 (1987).Google Scholar