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Numerical Simulation and Experimental Investigation of the Time-Of-Flight Technique Applied to a-Si:H/a-SiGe:H-Heterojunctions

Published online by Cambridge University Press:  01 January 1993

Rudi Brüggemann ,
Norbert Bernhard ,
Charles Main  and
Gottfried H. Bauer
Rudi Brüggemann
Affiliation:
Institut für Physikalische Elektronik, Universität Stuttgart,, Pfaffenwaldring 47, D-7000 Stuttgart 80,, Federal Republic of Germany
Norbert Bernhard
Affiliation:
Institut für Physikalische Elektronik, Universität Stuttgart,, Pfaffenwaldring 47, D-7000 Stuttgart 80,, Federal Republic of Germany
Charles Main
Affiliation:
Department of Electronic & Electrical Engineering, Dundee Institute of Technology, Bell Street, Dundee DDI 1HG, Scotland, UK
Gottfried H. Bauer
Affiliation:
Department of Electronic & Electrical Engineering, Dundee Institute of Technology, Bell Street, Dundee DDI 1HG, Scotland, UK
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Abstract

We report on a comparative study, employing the TOF-technique for the characterization of the properties of a-Si:H/a-SiGe:H-heterojunctions. Both the simulated and experimental electron current transients exhibit a pronounced difference depending on the direction of movement of the excess carriers (from the a-Si:H into the a-SiGe:H or vice versa). For the movement from the low bandgap a-SiGe:H into the a-Si:H we find a char¬acteristic increase in the transient current at room temperature, which, as the simulation can reveal, is attributed to the higher drift mobility in the a-Si:H. A drop in the current is observed when the direction for the transit is from a-Si:H to a-SiGe:H. The post-transit behaviour is dominated by the large amount of trapped carriers which remain on the SiGe side of the sample. The situation for a high barrier between a-Si:H and a-SiC:H and the influence of various parameters on the shape of the current transient are discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 297: Symposium A – Amorphous Silicon Technology - 1993 , 1993 , 413
Copyright
Copyright © Materials Research Society 1993

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References

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