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Nucleation of Tungsten on Titanium Nitride with Hydrogen Reduction of Tungsten Hexafluoride

Published online by Cambridge University Press:  22 February 2011

D. Srinivas ,
R. Foster ,
S. Marcus ,
R. Arora  and
H. Rebenne
D. Srinivas
Affiliation:
Materials Research Corporation, Phoenix, Arizona 85040
R. Foster
Affiliation:
Materials Research Corporation, Phoenix, Arizona 85040
S. Marcus
Affiliation:
Materials Research Corporation, Phoenix, Arizona 85040
R. Arora
Affiliation:
Materials Research Corporation, Phoenix, Arizona 85040
H. Rebenne
Affiliation:
Materials Research Corporation, Phoenix, Arizona 85040
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Abstract

In this work, a hydrogen (H2) reduction process has been developed which gives tungsten (W) nucleation on titanium nitride (TiN) adhesion layers with a very short incubation time, eliminating the need for a silane (SiH4reduced seed layer. The nucleation was found to be strongly dependent on the following factors: temperature of the substrate, total pressure in chamber, and gas introduction sequence into the reactor. Theenhanced nucleation rate has been explained based on two competing reactions: dissociation of H2, and formation of titanium subfluorides on the TiN surface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 282: Symposium E – Chemical Perspectives of Microelectronic Materials III , 1992 , 365
Copyright
Copyright © Materials Research Society 1993

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References

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