Hostname: page-component-76fb5796d-25wd4 Total loading time: 0 Render date: 2024-04-26T07:03:39.122Z Has data issue: false hasContentIssue false
  • English
  • Français

Nucleation & Growth of Octahedral Oxide Particles in Silicon: Oxygen Ion Implantation

Published online by Cambridge University Press:  28 February 2011

R. W. Carpenter ,
G. Vanderschaeve ,
C. J. Varkera  and
S. R. Wilson
R. W. Carpenter
Affiliation:
Center for Solid State Science, Arizona State University, Tempe, AZ 85287.
G. Vanderschaeve
Affiliation:
Center for Solid State Science, Arizona State University, Tempe, AZ 85287. Laboratory for Structure & Properties of the Solid State, Universite des Sciences et Techniques de Lille, Villeneuve d'Ascq 59655, France.
C. J. Varkera
Affiliation:
Center for Solid State Science, Arizona State University, Tempe, AZ 85287.
S. R. Wilson
Affiliation:
Motorola Semiconductor Research and Development Laboratories, Phoenix, AZ 85008.
Get access

Abstract

Czochralski silicon was implanted with oxygen at 0.4 and 3.5MeV to obtain concentrations near 1020 oxygen/cm3 in the implanted region. Following implantation the wafers were aged at about 1000°C for 7 hours, and the resulting precipitates were examined by HREM. A high density of octahedral SiOx precipitates (∼1015/cm3) was the dominant morphology. Plate type precipitates and dislocations were also present at lower density. The data indicate octahedra grow from the plates.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 59: Symposium K – Oxygen, Carbon, Hydrogen and Nitrogen in Crystalline Silicon , 1985 , 309
Copyright
Copyright © Materials Research Society 1986

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Bourret, A., p. 129, Proc. 13th Int'l. Conf. Defects in Semiconductors, Ed. by Kimmerling, L.C. and Parsey, J.M. Jr, TMS/AIME (1984).Google Scholar
2. Tsai, H.L., Carpenter, R.W. and Peng, J.D., p. 344, Proc. 42nd Ann. Mtg. Elec. Mic. Soc. Amer., Ed. Bailey, G.W., San Francisco Press, San Francisco (1984).Google Scholar
3. Varker, C.J., Wilson, S.R., Chan, S.S., Whitfield, J.D. and Krause, S.J., p. 129, Mat. Res. Soc. Symp. Proc. Vol. 45, Edited by Appleton, B.R., Eisen, F.H., and Sigmon, T.W. 1985.Google Scholar
4. Shimura, F., J. Cryst. Growth 54, 588 (1981).Google Scholar
5. Ponce, F.A., Yamashita, T. and Hahn, S., App. Phys. Lett. 43, 1051 (1983).Google Scholar
6. Bourret, A., Thibault-Desseaux, J. and Seidman, D.N., Jour. App. Phys. 55, 825 (1984).Google Scholar
7. Tsai, H.L., Carpenter, R.W. & Peng, J.D., J. Electrochem. Soc., to be published.Google Scholar