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Nucleation and Growth of μc-Si:H n- and p-Type Layers in a-Si:H p-i-n AND n-i-p Solar Cells: Real Time Spectroellpsometry Studies

Published online by Cambridge University Press:  15 February 2011

Joohyun Koh ,
H. Fujiwara ,
C. R. Wronskii  and
R. W. Collins
Joohyun Koh
Affiliation:
Materials Research Laboratory and The Pennsylvania State University, University Park, PA 16802.
H. Fujiwara
Affiliation:
Materials Research Laboratory and The Pennsylvania State University, University Park, PA 16802.
C. R. Wronskii
Affiliation:
Departments of Electrical Engineering and The Pennsylvania State University, University Park, PA 16802.
R. W. Collins
Affiliation:
Departments of Physics The Pennsylvania State University, University Park, PA 16802.
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Abstract

We have applied real time spectroellipsometry (RTSE) to study the growth of microcrystalline silicon n- and p-layers [μc-Si:H:(P,B)] incorporated into amorphous silicon (a-Si:H) p-i-n and n-i-p solar cells, respectively. In previous research, we have applied RTSE to characterize a-Si:H solar cells having only amorphous component layers. The μc-Si:H(P,B) component layers, however, pose a more difficult RTSE analysis problem for two reasons. First, the near-surface of the underlying i-layer is modified in the μc-Si:H:(P,B) growth process, and second, the microstructural evolution near the i/(n,p) interfaces is very complicated. From RTSE spectra (1.5 < hv < 4 eV) collected every ∼4–15 s during growth, we have extracted the time evolution of the μc-Si:H:(P,B) layer microstructure, thicknesses, and optical properties along with the modifications that the near-surface i-layer properties undergo in the formation of the i/(n,p) interfaces. We suggest that the beneficial optical properties of the microcrystalline layers may be due to size effects in the crystallites that make up the films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 452 , 1996 , 895
Copyright
Copyright © Materials Research Society 1997

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References

REFERENCES

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