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Nucleation and Growth of μc-Si:H n- and p-Type Layers in a-Si:H p-i-n AND n-i-p Solar Cells: Real Time Spectroellpsometry Studies

Published online by Cambridge University Press:  15 February 2011

Joohyun Koh
Affiliation:
Materials Research Laboratory and The Pennsylvania State University, University Park, PA 16802.
H. Fujiwara
Affiliation:
Materials Research Laboratory and The Pennsylvania State University, University Park, PA 16802.
C. R. Wronskii
Affiliation:
Departments of Electrical Engineering and The Pennsylvania State University, University Park, PA 16802.
R. W. Collins
Affiliation:
Departments of Physics The Pennsylvania State University, University Park, PA 16802.
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Abstract

We have applied real time spectroellipsometry (RTSE) to study the growth of microcrystalline silicon n- and p-layers [μc-Si:H:(P,B)] incorporated into amorphous silicon (a-Si:H) p-i-n and n-i-p solar cells, respectively. In previous research, we have applied RTSE to characterize a-Si:H solar cells having only amorphous component layers. The μc-Si:H(P,B) component layers, however, pose a more difficult RTSE analysis problem for two reasons. First, the near-surface of the underlying i-layer is modified in the μc-Si:H:(P,B) growth process, and second, the microstructural evolution near the i/(n,p) interfaces is very complicated. From RTSE spectra (1.5 < hv < 4 eV) collected every ∼4–15 s during growth, we have extracted the time evolution of the μc-Si:H:(P,B) layer microstructure, thicknesses, and optical properties along with the modifications that the near-surface i-layer properties undergo in the formation of the i/(n,p) interfaces. We suggest that the beneficial optical properties of the microcrystalline layers may be due to size effects in the crystallites that make up the films.

Type
Research Article
Copyright
Copyright © Materials Research Society 1997

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References

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