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Nucleation and Crystallization of Amorphous Silicon-Aluminum Thin Films

Published online by Cambridge University Press:  15 February 2011

F. Lin ,
M. K. Hatalis ,
S. Girginoudi ,
D. Girginoudi ,
N. Georgoulas  and
A. Thanailakis
F. Lin
Affiliation:
Lehigh University, Dept. of Computer Science and Electrical Engineering, Bethlehem, PA 18015.
M. K. Hatalis
Affiliation:
Lehigh University, Dept. of Computer Science and Electrical Engineering, Bethlehem, PA 18015.
S. Girginoudi
Affiliation:
Democritus University of Trace, Dept. of Electrical Engineering, 67100 Xanthi, Greece.
D. Girginoudi
Affiliation:
Democritus University of Trace, Dept. of Electrical Engineering, 67100 Xanthi, Greece.
N. Georgoulas
Affiliation:
Democritus University of Trace, Dept. of Electrical Engineering, 67100 Xanthi, Greece.
A. Thanailakis
Affiliation:
Democritus University of Trace, Dept. of Electrical Engineering, 67100 Xanthi, Greece.
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Abstract

The phase transformation of amorphous silicon-aluminum thin films with 16 at.% and 30 at.% aluminum was characterized by TEM during an in-situ anneal at 500°C. No crystallization was observed in the samples having 16 at.% Al even after a 10 hour anneal at 500°C. In contrast, nucleation of crystallites was observed in the samples having 30 at.% Al after a 40 min anneal. The size of these crystallites grew during annealing. Single crystal regions were also observed and were identified as aluminum having <111> orientation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 230: Symposium R – Phase Transformation Kinetics in Thin Films , 1991 , 195
Copyright
Copyright © Materials Research Society 1992

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References

1. Wronski, C.R., Solid State Tech., 131, 113 (1988).Google Scholar
2. Hatalis, M.K. and Greve, D.W., J. Appl. Phys., 63, 2260 (1988).Google Scholar
3. Herd, S.R., Chaudhari, P. and Brodsky, M.H., J. of Non-Cryst. Solids, 7, 309 (1972).Google Scholar
4. Sigurd, D., Ottaviani, G., Marrello, V., Mayer, J.W. and McCaldin, J.O., J. of Non-Cryst. Solids, 12 135 (1973).Google Scholar
5. Stoemenos, J. et al, Appl. Phys. Lett., 58, 1196 (1991).Google Scholar
6. Koster, U. and Weiss, P., J. of Non-Cryst. Solids, 17, 359 (1975).Google Scholar
7. Cammarata, R.C., Thomson, C.V., Hayzelden, C. and Tu, K.N., J. Mater. Res., 5, 2133 (1990).Google Scholar
8. Trumbore, F.A., Bell System Tech. J., 39, 205 (1960).Google Scholar
9. Elliot, R.P., Constitution of Binary Alloys, first supplement (McGraw-Hill, New York, 1965).Google Scholar
10. Hatalis, M.K., Lin, F. and Westcott, M.R., MRS Symposium Proc. 164, 87 (1990).Google Scholar